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25 //
26 // -------------------------------------------------------------------
27 // -------------------------------------------------------------------
28
29 //....oooOO0OOooo........oooOO0OOooo........oooOO0OOooo........oooOO0OOooo....
30
31 //....oooOO0OOooo........oooOO0OOooo........oooOO0OOooo........oooOO0OOooo....
32
33 #include "MicroElecPhysics.hh"
34 #include "G4SystemOfUnits.hh"
35
36
37 // Geant4-MicroElec MODELS
38
39 #include "G4MicroElecElastic.hh"
40 #include "G4MicroElecElasticModel_new.hh"
41
42 #include "G4MicroElecInelastic.hh"
43 #include "G4MicroElecInelasticModel_new.hh"
44
45 #include "G4MicroElecLOPhononScattering.hh"
46 #include "G4MicroElecLOPhononModel.hh"
47 #include "G4MicroElecSurface.hh"
48
49 //
50
51 #include "G4LossTableManager.hh"
52 #include "G4EmConfigurator.hh"
53 #include "G4VEmModel.hh"
54 #include "G4DummyModel.hh"
55 #include "G4eIonisation.hh"
56 #include "G4hIonisation.hh"
57 #include "G4ionIonisation.hh"
58 #include "G4eMultipleScattering.hh"
59 #include "G4hMultipleScattering.hh"
60 #include "G4BraggModel.hh"
61 #include "G4BraggIonModel.hh"
62 #include "G4BetheBlochModel.hh"
63 #include "G4UrbanMscModel.hh"
64 #include "G4MollerBhabhaModel.hh"
65 #include "G4IonFluctuations.hh"
66 #include "G4UniversalFluctuation.hh"
67
68 #include "ElectronCapture.hh"
69
70 #include "G4UAtomicDeexcitation.hh"
71
72
73
74 //....oooOO0OOooo........oooOO0OOooo........oooOO0OOooo........oooOO0OOooo....
75
76 MicroElecPhysics::MicroElecPhysics(): G4VUserPhysicsList()
77 {
78 defaultCutValue = 1*micrometer;
79 cutForGamma = defaultCutValue;
80 cutForElectron = defaultCutValue;
81 cutForPositron = defaultCutValue;
82 cutForProton = defaultCutValue;
83
84 SetVerboseLevel(1);
85 }
86
87 //....oooOO0OOooo........oooOO0OOooo........oooOO0OOooo........oooOO0OOooo....
88
89 MicroElecPhysics::~MicroElecPhysics()
90 {}
91
92 //....oooOO0OOooo........oooOO0OOooo........oooOO0OOooo........oooOO0OOooo....
93
94 void MicroElecPhysics::ConstructParticle()
95 {
96 ConstructBosons();
97 ConstructLeptons();
98 ConstructBarions();
99 }
100
101 //....oooOO0OOooo........oooOO0OOooo........oooOO0OOooo........oooOO0OOooo....
102
103 void MicroElecPhysics::ConstructBosons()
104 {
105 // gamma
106 G4Gamma::GammaDefinition();
107 }
108 //....oooOO0OOooo........oooOO0OOooo........oooOO0OOooo........oooOO0OOooo....
109
110 void MicroElecPhysics::ConstructLeptons()
111 {
112 // leptons
113 G4Electron::ElectronDefinition();
114 G4Positron::PositronDefinition();
115 }
116
117 //....oooOO0OOooo........oooOO0OOooo........oooOO0OOooo........oooOO0OOooo....
118
119 void MicroElecPhysics::ConstructBarions()
120 {
121 // baryons
122 G4Proton::ProtonDefinition();
123 G4GenericIon::GenericIonDefinition();
124 }
125
126 //....oooOO0OOooo........oooOO0OOooo........oooOO0OOooo........oooOO0OOooo....
127
128 void MicroElecPhysics::ConstructProcess()
129 {
130 AddTransportation();
131 ConstructEM();
132 ConstructGeneral();
133 }
134
135 //....oooOO0OOooo........oooOO0OOooo........oooOO0OOooo........oooOO0OOooo....
136
137
138 //....oooOO0OOooo........oooOO0OOooo........oooOO0OOooo........oooOO0OOooo....
139
140 void MicroElecPhysics::ConstructEM()
141 {
142
143 G4EmParameters* param = G4EmParameters::Instance();
144 //param->SetDefaults();
145 param->SetBuildCSDARange(true);
146 //param->SetMscStepLimitType(fUseSafetyPlus);
147 //param->SetMscStepLimitType(fUseDistanceToBoundary);
148 param->SetMscStepLimitType(fUseSafety);
149 param->RegionsMicroElec();
150 // physicList ISS
151 param->SetDefaults();
152 param->SetMinEnergy(0.1*eV);
153 param->SetMaxEnergy(10 * TeV);
154 param->SetLowestElectronEnergy(0 * eV); //<--- Energie de cut dans le vide!!! A fixer 0eV pour ne pas fausser les SEY
155 param->SetNumberOfBinsPerDecade(20);
156 param->ActivateAngularGeneratorForIonisation(true);
157 param->SetAugerCascade(true);//*/
158
159 auto particleIterator=GetParticleIterator();
160 particleIterator->reset();
161
162 while( (*particleIterator)() )
163 {
164
165 G4ParticleDefinition* particle = particleIterator->value();
166 G4ProcessManager* pmanager = particle->GetProcessManager();
167 G4String particleName = particle->GetParticleName();
168
169 // *********************************
170 // 1) Processes for the World region
171 // *********************************
172
173 if (particleName == "e-") {
174
175
176 // STANDARD msc is active in the world
177 G4eMultipleScattering* msc = new G4eMultipleScattering();
178 msc->AddEmModel(1, new G4UrbanMscModel());
179 pmanager->AddProcess(msc, -1, 1, -1);
180
181 // STANDARD ionisation is active in the world
182 G4eIonisation* eion = new G4eIonisation();
183 pmanager->AddProcess(eion, -1, 2, 2);
184
185 // MicroElec elastic is not active in the world
186 //G4MicroElecElasticCorrected* theMicroElecElasticProcess = new G4MicroElecElasticCorrected("e-_G4MicroElecElastic");
187 //theMicroElecElasticProcess->SetEmModel(new G4DummyModel(),1);
188 //pmanager->AddDiscreteProcess(theMicroElecElasticProcess);
189
190 G4MicroElecElastic* theMicroElecElasticProcess = new G4MicroElecElastic("e-_G4MicroElecElastic");
191 theMicroElecElasticProcess->SetEmModel(new G4DummyModel(),1);
192 // G4MicroElecElasticModel_new* mod = new G4MicroElecElasticModel_new();
193 //theMicroElecElasticProcess->AddEmModel(0,mod);
194 pmanager->AddDiscreteProcess(theMicroElecElasticProcess);
195
196 // MicroElec ionisation is not active in the world
197 /*G4MicroElecInelastic* microelecioni = new G4MicroElecInelastic("e-_G4MicroElecInelastic");
198 microelecioni->SetEmModel(new G4DummyModel(),1);
199 pmanager->AddDiscreteProcess(microelecioni);*/
200
201 G4MicroElecInelastic* microelecioni = new G4MicroElecInelastic("e-_G4Dielectrics");
202 microelecioni->SetEmModel(new G4DummyModel(),1);
203 pmanager->AddDiscreteProcess(microelecioni);
204
205 //Phonons for SiO2
206
207 G4MicroElecLOPhononScattering* opticalPhonon = new G4MicroElecLOPhononScattering("e-_G4LOPhononScattering");
208 opticalPhonon->SetEmModel(new G4DummyModel(), 1);
209 pmanager->AddDiscreteProcess(opticalPhonon);
210
211 /*G4LOPhononScattering* LO60 = new G4LOPhononScattering("e-_G4LO60");
212 LO60->SetEmModel(new G4DummyModel(), 1);
213 pmanager->AddDiscreteProcess(LO60);//*/
214
215
216
217 G4MicroElecSurface* MicroElecSurf = new G4MicroElecSurface("e-_G4MicroElecSurface");
218 MicroElecSurf->SetProcessManager(pmanager);
219 pmanager->AddDiscreteProcess(MicroElecSurf);//*/
220
221 ElectronCapture* ecap = new ElectronCapture("Target",0.9*eV); //<--- Piges pour Al2O3
222 pmanager->AddDiscreteProcess(ecap);//*/
223
224 } else if ( particleName == "proton" ) {
225
226 // STANDARD msc is active in the world
227 /*G4hMultipleScattering* msc = new G4hMultipleScattering();
228 msc->AddEmModel(1, new G4UrbanMscModel());
229 pmanager->AddProcess(msc, -1, 1, -1);*/
230
231
232 // STANDARD ionisation is active in the world
233 G4hIonisation* hion = new G4hIonisation();
234 pmanager->AddProcess(hion, -1, 2, 2);
235
236 // Dielectric ionisation is not active in the world
237 G4MicroElecInelastic* dielectricioni = new G4MicroElecInelastic("p_G4Dielectrics");
238 dielectricioni->SetEmModel(new G4DummyModel(),1);
239 //dielectricioni->SetEmModel(new G4DummyModel(),2);
240 pmanager->AddDiscreteProcess(dielectricioni);
241
242 } else if(particleName == "alpha") {
243
244
245 // STANDARD ionisation is active in the world
246 G4ionIonisation* hion = new G4ionIonisation();
247 pmanager->AddProcess(hion, -1, 2, 2);
248 // Dielectric ionisation is not active in the world
249 G4MicroElecInelastic* dielectricioni = new G4MicroElecInelastic("alpha_G4Dielectrics");
250 dielectricioni->SetEmModel(new G4DummyModel(),1);
251 dielectricioni->SetEmModel(new G4DummyModel(),2);
252 pmanager->AddDiscreteProcess(dielectricioni);
253
254 } else if (particleName == "GenericIon") {
255
256 // STANDARD msc is active in the world
257 /*G4hMultipleScattering* msc = new G4hMultipleScattering();
258 msc->AddEmModel(1, new G4UrbanMscModel());
259 pmanager->AddProcess(new G4hMultipleScattering, -1, 1, -1);*/
260
261 /*G4CoulombScattering* cs = new G4CoulombScattering();
262 cs->AddEmModel(0, new G4IonCoulombScatteringModel());
263 cs->SetBuildTableFlag(false);
264 pmanager->AddDiscreteProcess(cs);*/
265
266
267
268 // STANDARD ionisation is active in the world
269 G4ionIonisation* hion = new G4ionIonisation();
270 pmanager->AddProcess(hion, -1, 2, 2);
271
272 // Dielectric ionisation is not actived in the world
273 G4MicroElecInelastic* dielectricioni = new G4MicroElecInelastic("ion_G4Dielectrics");
274 dielectricioni->SetEmModel(new G4DummyModel(),1);
275 dielectricioni->SetEmModel(new G4DummyModel(),2);
276 pmanager->AddDiscreteProcess(dielectricioni);
277 }
278 }
279
280 // **************************************
281 // 2) Define processes for Target region
282 // **************************************
283
284 // STANDARD EM processes should be inactivated when corresponding MicroElec processes are used
285 // - STANDARD EM e- processes are inactivated below 100 MeV
286 // - STANDARD EM proton & ion processes are inactivated below standEnergyLimit
287 //
288 G4EmConfigurator* em_config = G4LossTableManager::Instance()->EmConfigurator();
289
290 G4VEmModel* mod;
291 // *** e-
292
293 // ---> STANDARD EM processes are inactivated below 100 MeV
294
295 G4UrbanMscModel* msc = new G4UrbanMscModel();
296 msc->SetActivationLowEnergyLimit(100*MeV);
297 em_config->SetExtraEmModel("e-","msc",msc,"Target");
298
299
300 mod = new G4MollerBhabhaModel();
301 mod->SetActivationLowEnergyLimit(10*MeV);
302 em_config->SetExtraEmModel("e-","eIoni",mod,"Target",0.0,10*TeV, new G4UniversalFluctuation());
303
304
305 // ---> MicroElec processes activated
306
307
308 mod = new G4MicroElecElasticModel_new();
309 em_config->SetExtraEmModel("e-","e-_G4MicroElecElastic",mod,"Target",0.1*eV,100*MeV);
310
311 mod = new G4MicroElecInelasticModel_new();
312 em_config->SetExtraEmModel("e-","e-_G4Dielectrics",mod,"Target",0.1*eV,10*MeV);
313
314 // G4double hw = 0.15*eV;
315
316 //Old phonon
317
318 /*mod = new LOPhononModel(0.153*eV,false);
319 em_config->SetExtraEmModel("e-", "e-_G4LOPhononScattering", mod, "Target", 0.153*eV, 10 * MeV);
320
321 mod = new LOPhononModel(0.063*eV,false);
322 em_config->SetExtraEmModel("e-", "e-_G4LO60", mod, "Target", 0.06*eV, 10 * MeV);//*/
323
324 //Phonons LO pour sio2 et al2o3
325
326 mod = new G4MicroElecLOPhononModel();
327 em_config->SetExtraEmModel("e-", "e-_G4LOPhononScattering", mod, "Target", 0.1 * eV, 10 * MeV);//*/
328
329
330 // *** proton ----------------------------------------------------------
331
332 // ---> STANDARD EM processes inactivated below standEnergyLimit
333
334 // STANDARD msc is still active
335 // Inactivate following STANDARD processes
336
337 // il faut desactiver Bragg puisque notre modle descend en-dessous de 50 keV
338 /*mod = new G4BraggModel();
339 mod->SetActivationHighEnergyLimit(50*keV);
340 em_config->SetExtraEmModel("proton","hIoni",mod,"Target",0.0,2*MeV, new G4IonFluctuations());*/
341
342 mod = new G4BetheBlochModel();
343 mod->SetActivationLowEnergyLimit(10*MeV);
344 em_config->SetExtraEmModel("proton","hIoni",mod,"Target",2*MeV,10*TeV, new G4IonFluctuations());
345
346 // ---> Dielectric processes activated
347
348
349 mod = new G4MicroElecInelasticModel_new();
350 mod->SetActivationLowEnergyLimit(100*eV);
351 em_config->SetExtraEmModel("proton","p_G4Dielectrics",mod,"Target",100*eV,10*MeV);
352 //em_config->SetExtraEmModel("proton","p_G4Dielectrics",new G4DummyModel,"Target",10*MeV,10*TeV);
353
354 //*/
355
356
357 // *** alpha ----------------------------------------------------------
358 mod = new G4BetheBlochModel();
359 mod->SetActivationLowEnergyLimit(10*MeV);
360 em_config->SetExtraEmModel("alpha","ionIoni",mod,"Target",10*MeV,10*TeV, new G4IonFluctuations());
361
362 /*mod = new G4MicroElecInelasticModel_new();
363 //mod->SetActivationLowEnergyLimit(100*eV);
364 em_config->SetExtraEmModel("alpha","alpha_G4Dielectrics",mod,"Target",0.0,10*MeV);//*/
365
366 // *** ion ----------------------------------------------------------
367
368 // ---> STANDARD EM processes inactivated below standEnergyLimit
369
370 // STANDARD msc is still active
371 // Inactivate following STANDARD processes
372
373
374 /*mod = new G4BraggIonModel();
375 mod->SetActivationHighEnergyLimit(50*keV);
376 em_config->SetExtraEmModel("GenericIon","ionIoni",mod,"Target",0.0,2*MeV, new G4IonFluctuations());*/
377
378 mod = new G4BetheBlochModel();
379 mod->SetActivationLowEnergyLimit(10*MeV);
380 em_config->SetExtraEmModel("GenericIon","ionIoni",mod,"Target",10*MeV,10*TeV, new G4IonFluctuations());
381
382 // ---> Dielectric processes activated
383 mod = new G4MicroElecInelasticModel_new();
384 mod->SetActivationLowEnergyLimit(100*eV);
385 em_config->SetExtraEmModel("GenericIon","ion_G4Dielectrics",mod,"Target",0.0,10*MeV);
386 //em_config->SetExtraEmModel("GenericIon","ion_G4Dielectrics",new G4DummyModel,"Target",10*GeV,10*TeV);
387
388 // Deexcitation
389 //
390 G4VAtomDeexcitation* de = new G4UAtomicDeexcitation();
391 G4LossTableManager::Instance()->SetAtomDeexcitation(de);
392 de->SetFluo(true);
393 de->SetAuger(true);
394 de->SetPIXE(true);
395 de->InitialiseForNewRun();
396
397 // G4ProductionCutsTable::GetProductionCutsTable()->SetEnergyRange(5*eV, 100.0*GeV);
398
399 }
400
401 //....oooOO0OOooo........oooOO0OOooo........oooOO0OOooo........oooOO0OOooo....
402
403 void MicroElecPhysics::ConstructGeneral()
404 { }
405
406 //....oooOO0OOooo........oooOO0OOooo........oooOO0OOooo........oooOO0OOooo....
407
408 void MicroElecPhysics::SetCuts()
409 {
410 if (verboseLevel >0)
411 {
412 G4cout << "MicroElecPhysics::SetCuts:";
413 G4cout << "CutLength : " << G4BestUnit(defaultCutValue,"Length") << G4endl;
414 }
415
416 // set cut values for gamma at first and for e- second and next for e+,
417 // because some processes for e+/e- need cut values for gamma
418 SetCutValue(cutForGamma, "gamma");
419 SetCutValue(cutForElectron, "e-");
420 SetCutValue(cutForPositron, "e+");
421 SetCutValue(cutForProton, "proton");
422
423 if (verboseLevel>0) { DumpCutValuesTable(); }
424 }
425