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1 //
2 // ********************************************************************
3 // * License and Disclaimer *
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6 // * the Geant4 Collaboration. It is provided under the terms and *
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14 // * regarding this software system or assume any liability for its *
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19 // * technical work of the GEANT4 collaboration. *
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24 // ********************************************************************
25 //
26 //
27 // G4MicroElecInelasticModel_new.hh, 2011/08/29 A.Valentin, M. Raine are with CEA [a]
28 // 2020/05/20 P. Caron, C. Inguimbert are with ONERA [b]
29 // Q. Gibaru is with CEA [a], ONERA [b] and CNES [c]
30 // M. Raine and D. Lambert are with CEA [a]
31 //
32 // A part of this work has been funded by the French space agency(CNES[c])
33 // [a] CEA, DAM, DIF - 91297 ARPAJON, France
34 // [b] ONERA - DPHY, 2 avenue E.Belin, 31055 Toulouse, France
35 // [c] CNES, 18 av.E.Belin, 31401 Toulouse CEDEX, France
36 //
37 // Based on the following publications
38 // - A.Valentin, M. Raine,
39 // Inelastic cross-sections of low energy electrons in silicon
40 // for the simulation of heavy ion tracks with the Geant4-DNA toolkit,
41 // NSS Conf. Record 2010, pp. 80-85
42 // https://doi.org/10.1109/NSSMIC.2010.5873720
43 //
44 // - A.Valentin, M. Raine, M.Gaillardin, P.Paillet
45 // Geant4 physics processes for microdosimetry simulation:
46 // very low energy electromagnetic models for electrons in Silicon,
47 // https://doi.org/10.1016/j.nimb.2012.06.007
48 // NIM B, vol. 288, pp. 66-73, 2012, part A
49 // heavy ions in Si, NIM B, vol. 287, pp. 124-129, 2012, part B
50 // https://doi.org/10.1016/j.nimb.2012.07.028
51 //
52 // - M. Raine, M. Gaillardin, P. Paillet
53 // Geant4 physics processes for silicon microdosimetry simulation:
54 // Improvements and extension of the energy-range validity up to 10 GeV/nucleon
55 // NIM B, vol. 325, pp. 97-100, 2014
56 // https://doi.org/10.1016/j.nimb.2014.01.014
57 //
58 // - J. Pierron, C. Inguimbert, M. Belhaj, T. Gineste, J. Puech, M. Raine
59 // Electron emission yield for low energy electrons:
60 // Monte Carlo simulation and experimental comparison for Al, Ag, and Si
61 // Journal of Applied Physics 121 (2017) 215107.
62 // https://doi.org/10.1063/1.4984761
63 //
64 // - P. Caron,
65 // Study of Electron-Induced Single-Event Upset in Integrated Memory Devices
66 // PHD, 16th October 2019
67 //
68 // - Q.Gibaru, C.Inguimbert, P.Caron, M.Raine, D.Lambert, J.Puech,
69 // Geant4 physics processes for microdosimetry and secondary electron emission simulation :
70 // Extension of MicroElec to very low energies and new materials
71 // NIM B, 2020, in review.
72 //
73 //
74 //....oooOO0OOooo........oooOO0OOooo........oooOO0OOooo........oooOO0OOooo......
75
76 #ifndef G4MICROELECINELASTICMODEL_NEW_HH
77 #define G4MICROELECINELASTICMODEL_NEW_HH 1
78
79 #include "globals.hh"
80 #include "G4VEmModel.hh"
81 #include "G4ParticleChangeForGamma.hh"
82 #include "G4ProductionCutsTable.hh"
83 #include "G4MicroElecMaterialStructure.hh"
84 #include "G4MicroElecCrossSectionDataSet_new.hh"
85 #include "G4Electron.hh"
86 #include "G4Proton.hh"
87 #include "G4GenericIon.hh"
88 #include "G4ParticleDefinition.hh"
89 #include "G4LogLogInterpolation.hh"
90 #include "G4VAtomDeexcitation.hh"
91 #include "G4NistManager.hh"
92
93 class G4MicroElecInelasticModel_new : public G4VEmModel
94 {
95
96 public:
97 explicit G4MicroElecInelasticModel_new(const G4ParticleDefinition* p = nullptr,
98 const G4String& nam = "MicroElecInelasticModel");
99 ~G4MicroElecInelasticModel_new() override;
100
101 void Initialise(const G4ParticleDefinition*, const G4DataVector&) override;
102
103 G4double CrossSectionPerVolume(const G4Material* material,
104 const G4ParticleDefinition* p,
105 G4double ekin,
106 G4double emin,
107 G4double emax) override;
108
109 void SampleSecondaries(std::vector<G4DynamicParticle*>*,
110 const G4MaterialCutsCouple*,
111 const G4DynamicParticle*,
112 G4double tmin,
113 G4double maxEnergy) override;
114
115 G4double DifferentialCrossSection(const G4ParticleDefinition * aParticleDefinition,
116 G4double k, G4double energyTransfer, G4int shell);
117
118 G4double ComputeRelativistVelocity(G4double E, G4double mass);
119
120 G4double ComputeElasticQmax(G4double T1i, G4double T2i, G4double m1, G4double m2);
121
122 G4double BKZ(G4double Ep, G4double mp, G4int Zp, G4double EF);
123 // compute the effective charge according Brandt et Kitagawa theory
124
125 G4double stepFunc(G4double x);
126 G4double vrkreussler(G4double v, G4double vF);
127
128 G4MicroElecInelasticModel_new & operator=(const G4MicroElecInelasticModel_new &right) = delete;
129 G4MicroElecInelasticModel_new(const G4MicroElecInelasticModel_new&) = delete;
130
131 private:
132 //
133 // private methods
134 //
135 G4int RandomSelect(G4double energy,const G4String& particle, G4double originalMass, G4int originalZ );
136
137 G4double RandomizeCreatedElectronEnergy(G4double secondaryKinetic);
138
139 G4double RandomizeEjectedElectronEnergy(const G4ParticleDefinition * aParticleDefinition,
140 G4double incomingParticleEnergy, G4int shell,
141 G4double originalMass, G4int originalZ) ;
142
143 G4double RandomizeEjectedElectronEnergyFromCumulatedDcs(const G4ParticleDefinition*,
144 G4double k, G4int shell);
145
146 G4double TransferedEnergy(const G4ParticleDefinition*, G4double k,
147 G4int ionizationLevelIndex, G4double random);
148
149 G4double Interpolate(G4double e1, G4double e2, G4double e, G4double xs1, G4double xs2);
150
151 G4double QuadInterpolator( G4double e11, G4double e12, G4double e21, G4double e22,
152 G4double x11, G4double x12, G4double x21, G4double x22,
153 G4double t1, G4double t2, G4double t, G4double e);
154 //
155 // private elements
156 //
157 G4ParticleChangeForGamma* fParticleChangeForGamma = nullptr;
158
159 //deexcitation manager to produce fluo photns and e-
160 G4VAtomDeexcitation* fAtomDeexcitation = nullptr;
161 G4Material* nistSi = nullptr;
162 G4MicroElecMaterialStructure* currentMaterialStructure = nullptr;
163
164 typedef std::map<G4String,G4String,std::less<G4String> > MapFile;
165 typedef std::map<G4String,G4MicroElecCrossSectionDataSet_new*,std::less<G4String> > MapData;
166 typedef std::map<G4double, std::map<G4double, G4double> > TriDimensionMap;
167 typedef std::map<G4double, std::vector<G4double> > VecMap;
168
169 //Tables for multilayers
170 typedef std::map<G4String, MapData*, std::less<G4String> > TCSMap;
171 TCSMap tableTCS; //TCS tables by particle
172 typedef std::map<G4String, std::vector<TriDimensionMap>* > dataDiffCSMap;
173 dataDiffCSMap eDiffDatatable, pDiffDatatable; //Transfer probabilities (for slower code)
174 dataDiffCSMap eNrjTransStorage, pNrjTransStorage; //Transfered energies and corresponding probability (faster code)
175 typedef std::map<G4String, std::vector<VecMap>* > dataProbaShellMap;
176 dataProbaShellMap eProbaShellStorage, pProbaShellStorage; //Cumulated Transfer probabilities (faster code)
177 typedef std::map<G4String, std::vector<G4double>* > incidentEnergyMap;
178 incidentEnergyMap eIncidentEnergyStorage, pIncidentEnergyStorage; //Incident energies for interpolation (faster code)
179 typedef std::map<G4String, VecMap* > TranfEnergyMap;
180 TranfEnergyMap eVecmStorage, pVecmStorage; //Transfered energy for interpolation (slower code)
181 typedef std::map<G4String, G4MicroElecMaterialStructure*, std::less<G4String> > MapStructure;
182 MapStructure tableMaterialsStructures; //Structures of all materials simulated
183
184 G4String currentMaterial = "";
185 std::map<G4String,G4double,std::less<G4String> > lowEnergyLimit;
186 std::map<G4String,G4double,std::less<G4String> > highEnergyLimit;
187
188 G4int verboseLevel;
189 G4bool isInitialised ;
190 G4bool fasterCode;
191 G4bool SEFromFermiLevel;
192
193 };
194
195 #endif
196