Geant4 Cross Reference

Cross-Referencing   Geant4
Geant4/materials/include/G4MicroElecMaterialStructure.hh

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  1 //
  2 // ********************************************************************
  3 // * License and Disclaimer                                           *
  4 // *                                                                  *
  5 // * The  Geant4 software  is  copyright of the Copyright Holders  of *
  6 // * the Geant4 Collaboration.  It is provided  under  the terms  and *
  7 // * conditions of the Geant4 Software License,  included in the file *
  8 // * LICENSE and available at  http://cern.ch/geant4/license .  These *
  9 // * include a list of copyright holders.                             *
 10 // *                                                                  *
 11 // * Neither the authors of this software system, nor their employing *
 12 // * institutes,nor the agencies providing financial support for this *
 13 // * work  make  any representation or  warranty, express or implied, *
 14 // * regarding  this  software system or assume any liability for its *
 15 // * use.  Please see the license in the file  LICENSE  and URL above *
 16 // * for the full disclaimer and the limitation of liability.         *
 17 // *                                                                  *
 18 // * This  code  implementation is the result of  the  scientific and *
 19 // * technical work of the GEANT4 collaboration.                      *
 20 // * By using,  copying,  modifying or  distributing the software (or *
 21 // * any work based  on the software)  you  agree  to acknowledge its *
 22 // * use  in  resulting  scientific  publications,  and indicate your *
 23 // * acceptance of all terms of the Geant4 Software license.          *
 24 // ********************************************************************
 25 //
 26 //
 27 // G4MicroElecMaterialStructure.hh, 2011/08/29 A.Valentin, M. Raine are with CEA [a]
 28 //                          2020/05/20 P. Caron, C. Inguimbert are with ONERA [b] 
 29 //                   Q. Gibaru is with CEA [a], ONERA [b] and CNES [c]
 30 //                   M. Raine and D. Lambert are with CEA [a]
 31 //
 32 // A part of this work has been funded by the French space agency(CNES[c])
 33 // [a] CEA, DAM, DIF - 91297 ARPAJON, France
 34 // [b] ONERA - DPHY, 2 avenue E.Belin, 31055 Toulouse, France
 35 // [c] CNES, 18 av.E.Belin, 31401 Toulouse CEDEX, France
 36 //
 37 // Based on the following publications
 38 //  - A.Valentin, M. Raine, 
 39 //    Inelastic cross-sections of low energy electrons in silicon
 40 //        for the simulation of heavy ion tracks with the Geant4-DNA toolkit,
 41 //        NSS Conf. Record 2010, pp. 80-85
 42 //             https://doi.org/10.1109/NSSMIC.2010.5873720
 43 //
 44 //      - A.Valentin, M. Raine, M.Gaillardin, P.Paillet
 45 //        Geant4 physics processes for microdosimetry simulation:
 46 //        very low energy electromagnetic models for electrons in Silicon,
 47 //             https://doi.org/10.1016/j.nimb.2012.06.007
 48 //        NIM B, vol. 288, pp. 66-73, 2012, part A
 49 //        heavy ions in Si, NIM B, vol. 287, pp. 124-129, 2012, part B
 50 //             https://doi.org/10.1016/j.nimb.2012.07.028
 51 //
 52 //  - M. Raine, M. Gaillardin, P. Paillet
 53 //        Geant4 physics processes for silicon microdosimetry simulation: 
 54 //        Improvements and extension of the energy-range validity up to 10 GeV/nucleon
 55 //        NIM B, vol. 325, pp. 97-100, 2014
 56 //             https://doi.org/10.1016/j.nimb.2014.01.014
 57 //
 58 //      - J. Pierron, C. Inguimbert, M. Belhaj, T. Gineste, J. Puech, M. Raine
 59 //        Electron emission yield for low energy electrons: 
 60 //        Monte Carlo simulation and experimental comparison for Al, Ag, and Si
 61 //        Journal of Applied Physics 121 (2017) 215107. 
 62 //               https://doi.org/10.1063/1.4984761
 63 //
 64 //      - P. Caron,
 65 //        Study of Electron-Induced Single-Event Upset in Integrated Memory Devices
 66 //        PHD, 16th October 2019
 67 //
 68 //  - Q.Gibaru, C.Inguimbert, P.Caron, M.Raine, D.Lambert, J.Puech, 
 69 //        Geant4 physics processes for microdosimetry and secondary electron emission simulation : 
 70 //        Extension of MicroElec to very low energies and new materials
 71 //        NIM B, 2020, in review.
 72 //
 73 //
 74 //....oooOO0OOooo........oooOO0OOooo........oooOO0OOooo........oooOO0OOooo...... 
 75 
 76 #ifndef G4MICROELECMATERIALSTRUCTURE_HH 
 77 #define G4MICROELECMATERIALSTRUCTURE_HH 1 
 78 
 79 #include "globals.hh" 
 80 #include "G4Material.hh"
 81 #include <vector>
 82 
 83 class G4MicroElecMaterialStructure
 84 {
 85 public:
 86   G4MicroElecMaterialStructure(const G4String& matName = "");
 87   virtual ~G4MicroElecMaterialStructure() = default;
 88   
 89   void ReadMaterialFile();
 90   G4double Energy(G4int level);
 91   G4int NumberOfLevels() { return nLevels; }
 92   G4double GetZ(G4int Shell);
 93   G4double ConvertUnit(const G4String& unitName);
 94   G4double GetEnergyGap() { return energyGap; }
 95   G4double GetInitialEnergy() { return initialEnergy; }
 96   G4int GetEADL_Enumerator(G4int shell) { return EADL_Enumerator[shell]; };
 97   G4double GetWorkFunction() { return workFunction; };
 98   G4String GetMaterialName() { return materialName; };
 99   G4double GetLimitEnergy(G4int level);
100   G4double GetElasticModelLowLimit() {return flimitElastic[0];}
101   G4double GetElasticModelHighLimit() { return flimitElastic[1]; }
102   G4double GetInelasticModelLowLimit(G4int pdg);
103   G4double GetInelasticModelHighLimit(G4int pdg);
104   G4bool IsShellWeaklyBound(G4int level);
105   
106 private:
107   // private elements     
108   G4int nLevels = 3;    // Number of levels of material
109   G4bool isCompound = false;
110   G4String materialName = "";
111   std::vector<G4bool> isShellWeaklyBoundVector;
112   std::vector<G4double> energyConstant;
113   std::vector<G4double> LimitEnergy;
114   std::vector<G4int> EADL_Enumerator;
115   G4double workFunction = 0.0;
116   G4double initialEnergy = 0.0;
117   std::vector<G4double> compoundShellZ;
118   G4double Z = 0.0;
119   G4double energyGap = 0.0;
120   G4double flimitElastic[2] = { 0,0 };
121   G4double flimitInelastic[4] = { 0,0,0,0 };
122 };
123 
124 #endif 
125