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1 //
2 // ********************************************************************
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24 // ********************************************************************
25 //
26 //
27 // G4MicroElecElasticModel_new.hh, 2011/08/29 A.Valentin, M. Raine are with CEA [a]
28 // 2020/05/20 P. Caron, C. Inguimbert are with ONERA [b]
29 // Q. Gibaru is with CEA [a], ONERA [b] and CNES [c]
30 // M. Raine and D. Lambert are with CEA [a]
31 //
32 // A part of this work has been funded by the French space agency(CNES[c])
33 // [a] CEA, DAM, DIF - 91297 ARPAJON, France
34 // [b] ONERA - DPHY, 2 avenue E.Belin, 31055 Toulouse, France
35 // [c] CNES, 18 av.E.Belin, 31401 Toulouse CEDEX, France
36 //
37 // Based on the following publications
38 // - A.Valentin, M. Raine,
39 // Inelastic cross-sections of low energy electrons in silicon
40 // for the simulation of heavy ion tracks with the Geant4-DNA toolkit,
41 // NSS Conf. Record 2010, pp. 80-85
42 // https://doi.org/10.1109/NSSMIC.2010.5873720
43 //
44 // - A.Valentin, M. Raine, M.Gaillardin, P.Paillet
45 // Geant4 physics processes for microdosimetry simulation:
46 // very low energy electromagnetic models for electrons in Silicon,
47 // https://doi.org/10.1016/j.nimb.2012.06.007
48 // NIM B, vol. 288, pp. 66-73, 2012, part A
49 // heavy ions in Si, NIM B, vol. 287, pp. 124-129, 2012, part B
50 // https://doi.org/10.1016/j.nimb.2012.07.028
51 //
52 // - M. Raine, M. Gaillardin, P. Paillet
53 // Geant4 physics processes for silicon microdosimetry simulation:
54 // Improvements and extension of the energy-range validity up to 10 GeV/nucleon
55 // NIM B, vol. 325, pp. 97-100, 2014
56 // https://doi.org/10.1016/j.nimb.2014.01.014
57 //
58 // - J. Pierron, C. Inguimbert, M. Belhaj, T. Gineste, J. Puech, M. Raine
59 // Electron emission yield for low energy electrons:
60 // Monte Carlo simulation and experimental comparison for Al, Ag, and Si
61 // Journal of Applied Physics 121 (2017) 215107.
62 // https://doi.org/10.1063/1.4984761
63 //
64 // - P. Caron,
65 // Study of Electron-Induced Single-Event Upset in Integrated Memory Devices
66 // PHD, 16th October 2019
67 //
68 // - Q.Gibaru, C.Inguimbert, P.Caron, M.Raine, D.Lambert, J.Puech,
69 // Geant4 physics processes for microdosimetry and secondary electron emission simulation :
70 // Extension of MicroElec to very low energies and new materials
71 // NIM B, 2020, in review.
72 //
73 //
74 //....oooOO0OOooo........oooOO0OOooo........oooOO0OOooo........oooOO0OOooo......
75
76 #ifndef G4MICROELECELASTICMODEL_NEW_HH
77 #define G4MICROELECELASTICMODEL_NEW_HH 1
78
79 #include <map>
80 #include <CLHEP/Units/SystemOfUnits.h>
81 #include "G4MicroElecMaterialStructure.hh"
82 #include "G4MicroElecCrossSectionDataSet_new.hh"
83 #include "G4VEmModel.hh"
84 #include "G4Electron.hh"
85 #include "G4ParticleChangeForGamma.hh"
86 #include "G4LogLogInterpolation.hh"
87 #include "G4ProductionCutsTable.hh"
88 #include "G4NistManager.hh"
89
90 class G4MicroElecElasticModel_new : public G4VEmModel
91 {
92
93 public:
94 G4MicroElecElasticModel_new(const G4ParticleDefinition* p = 0,
95 const G4String& nam = "MicroElecElasticModel");
96 ~G4MicroElecElasticModel_new() override;
97
98 void Initialise(const G4ParticleDefinition*, const G4DataVector&) override;
99
100 G4double CrossSectionPerVolume(const G4Material* material,
101 const G4ParticleDefinition* p,
102 G4double ekin,
103 G4double emin,
104 G4double emax) override;
105
106 G4double AcousticCrossSectionPerVolume(G4double ekin, G4double kbz, G4double rho,
107 G4double cs, G4double Aac, G4double Eac,
108 G4double prefactor);
109
110 void SampleSecondaries(std::vector<G4DynamicParticle*>*,
111 const G4MaterialCutsCouple*,
112 const G4DynamicParticle*,
113 G4double tmin,
114 G4double maxEnergy) override;
115
116 void SetKillBelowThreshold (G4double threshold);
117
118 G4double GetKillBelowThreshold () { return killBelowEnergy; }
119
120 G4double DamageEnergy(G4double T,G4double A, G4double Z);
121
122 protected:
123 G4ParticleChangeForGamma* fParticleChangeForGamma;
124
125 private:
126
127 G4MicroElecElasticModel_new & operator=(const G4MicroElecElasticModel_new &right);
128 G4MicroElecElasticModel_new(const G4MicroElecElasticModel_new&);
129
130 // Final state
131 G4double Theta(G4ParticleDefinition * aParticleDefinition, G4double k, G4double integrDiff);
132 G4double LinLinInterpolate(G4double e1, G4double e2, G4double e, G4double xs1, G4double xs2);
133 G4double LogLogInterpolate(G4double e1, G4double e2, G4double e, G4double xs1, G4double xs2);
134 G4double LinLogInterpolate(G4double e1, G4double e2, G4double e, G4double xs1, G4double xs2);
135 G4double QuadInterpolator(G4double e11, G4double e12, G4double e21, G4double e22,
136 G4double x11, G4double x12, G4double x21, G4double x22,
137 G4double t1, G4double t2, G4double t, G4double e);
138
139 G4double RandomizeCosTheta(G4double k);
140
141 G4Material* nistSi = nullptr;
142 G4double killBelowEnergy;
143 G4double lowEnergyLimit;
144 G4double lowEnergyLimitOfModel;
145 G4double highEnergyLimit;
146 G4bool isInitialised;
147 G4int verboseLevel;
148 // Cross section
149 typedef std::map<G4String,G4String,std::less<G4String> > MapFile;
150 MapFile tableFile;
151 typedef std::map<G4String,G4MicroElecCrossSectionDataSet_new*,std::less<G4String> > MapData;
152 //MapData tableData;
153
154 typedef std::map<G4String, MapData*, std::less<G4String> > TCSMap;
155 TCSMap tableTCS;
156
157 //Maps for multilayers
158 typedef std::map<G4double, std::map<G4double, G4double> > TriDimensionMap;
159
160 typedef std::map<G4String, TriDimensionMap* > ThetaMap;
161 ThetaMap thetaDataStorage; //Storage of angles (cumulated)
162
163 typedef std::map<G4String, std::vector<G4double>* > energyMap;
164 energyMap eIncidentEnergyStorage;
165
166 typedef std::map<G4double, std::vector<G4double> > VecMap;
167
168 typedef std::map<G4String, VecMap* > ProbaMap;
169 ProbaMap eProbaStorage; //Storage of probabilities for cumulated sections
170
171 typedef std::map<G4String, G4MicroElecMaterialStructure*, std::less<G4String> > MapStructure;
172
173 MapStructure tableMaterialsStructures; //Structures of all materials simulated
174
175 G4MicroElecMaterialStructure* currentMaterialStructure = nullptr;
176 typedef std::map<G4String, G4double, std::less<G4String> > MapEnergy;
177 MapEnergy lowEnergyLimitTable;
178 MapEnergy highEnergyLimitTable;
179 MapEnergy workFunctionTable;
180
181 G4bool killElectron, acousticModelEnabled;
182 G4String currentMaterialName;
183 G4bool isOkToBeInitialised;
184
185 };
186
187 //....oooOO0OOooo........oooOO0OOooo........oooOO0OOooo........oooOO0OOooo....
188
189 #endif
190