| Geant4 Cross Reference |
1 // 1
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24 // *******************************************
25 //
26 // -------------------------------------------
27 // -------------------------------------------
28
29 //....oooOO0OOooo........oooOO0OOooo........oo
30
31 //....oooOO0OOooo........oooOO0OOooo........oo
32
33 #include "MicroElecPhysics.hh"
34 #include "G4SystemOfUnits.hh"
35
36
37 // Geant4-MicroElec MODELS
38
39 #include "G4MicroElecElastic.hh"
40 #include "G4MicroElecElasticModel_new.hh"
41
42 #include "G4MicroElecInelastic.hh"
43 #include "G4MicroElecInelasticModel_new.hh"
44
45 #include "G4MicroElecLOPhononScattering.hh"
46 #include "G4MicroElecLOPhononModel.hh"
47 #include "G4MicroElecSurface.hh"
48
49 //
50
51 #include "G4LossTableManager.hh"
52 #include "G4EmConfigurator.hh"
53 #include "G4VEmModel.hh"
54 #include "G4DummyModel.hh"
55 #include "G4eIonisation.hh"
56 #include "G4hIonisation.hh"
57 #include "G4ionIonisation.hh"
58 #include "G4eMultipleScattering.hh"
59 #include "G4hMultipleScattering.hh"
60 #include "G4BraggModel.hh"
61 #include "G4BraggIonModel.hh"
62 #include "G4BetheBlochModel.hh"
63 #include "G4UrbanMscModel.hh"
64 #include "G4MollerBhabhaModel.hh"
65 #include "G4IonFluctuations.hh"
66 #include "G4UniversalFluctuation.hh"
67
68 #include "ElectronCapture.hh"
69
70 #include "G4UAtomicDeexcitation.hh"
71
72
73
74 //....oooOO0OOooo........oooOO0OOooo........oo
75
76 MicroElecPhysics::MicroElecPhysics(): G4VUser
77 {
78 defaultCutValue = 1*micrometer;
79 cutForGamma = defaultCutValue;
80 cutForElectron = defaultCutValue;
81 cutForPositron = defaultCutValue;
82 cutForProton = defaultCutValue;
83
84 SetVerboseLevel(1);
85 }
86
87 //....oooOO0OOooo........oooOO0OOooo........oo
88
89 MicroElecPhysics::~MicroElecPhysics()
90 {}
91
92 //....oooOO0OOooo........oooOO0OOooo........oo
93
94 void MicroElecPhysics::ConstructParticle()
95 {
96 ConstructBosons();
97 ConstructLeptons();
98 ConstructBarions();
99 }
100
101 //....oooOO0OOooo........oooOO0OOooo........oo
102
103 void MicroElecPhysics::ConstructBosons()
104 {
105 // gamma
106 G4Gamma::GammaDefinition();
107 }
108 //....oooOO0OOooo........oooOO0OOooo........o
109
110 void MicroElecPhysics::ConstructLeptons()
111 {
112 // leptons
113 G4Electron::ElectronDefinition();
114 G4Positron::PositronDefinition();
115 }
116
117 //....oooOO0OOooo........oooOO0OOooo........oo
118
119 void MicroElecPhysics::ConstructBarions()
120 {
121 // baryons
122 G4Proton::ProtonDefinition();
123 G4GenericIon::GenericIonDefinition();
124 }
125
126 //....oooOO0OOooo........oooOO0OOooo........oo
127
128 void MicroElecPhysics::ConstructProcess()
129 {
130 AddTransportation();
131 ConstructEM();
132 ConstructGeneral();
133 }
134
135 //....oooOO0OOooo........oooOO0OOooo........oo
136
137
138 //....oooOO0OOooo........oooOO0OOooo........oo
139
140 void MicroElecPhysics::ConstructEM()
141 {
142
143 G4EmParameters* param = G4EmParameters::Inst
144 //param->SetDefaults();
145 param->SetBuildCSDARange(true);
146 //param->SetMscStepLimitType(fUseSafetyPlus)
147 //param->SetMscStepLimitType(fUseDistanceToB
148 param->SetMscStepLimitType(fUseSafety);
149 param->RegionsMicroElec();
150 // physicList ISS
151 param->SetDefaults();
152 param->SetMinEnergy(0.1*eV);
153 param->SetMaxEnergy(10 * TeV);
154 param->SetLowestElectronEnergy(0 * eV); //<-
155 param->SetNumberOfBinsPerDecade(20);
156 param->ActivateAngularGeneratorForIonisation
157 param->SetAugerCascade(true);//*/
158
159 auto particleIterator=GetParticleIterator();
160 particleIterator->reset();
161
162 while( (*particleIterator)() )
163 {
164
165 G4ParticleDefinition* particle = particleI
166 G4ProcessManager* pmanager = particle->Get
167 G4String particleName = particle->GetParti
168
169 // *********************************
170 // 1) Processes for the World region
171 // *********************************
172
173 if (particleName == "e-") {
174
175
176 // STANDARD msc is active in the world
177 G4eMultipleScattering* msc = new G4eMult
178 msc->AddEmModel(1, new G4UrbanMscModel()
179 pmanager->AddProcess(msc, -1, 1, -1);
180
181 // STANDARD ionisation is active in the
182 G4eIonisation* eion = new G4eIonisation(
183 pmanager->AddProcess(eion, -1, 2, 2);
184
185 // MicroElec elastic is not active in th
186 //G4MicroElecElasticCorrected* theMicroE
187 //theMicroElecElasticProcess->SetEmModel
188 //pmanager->AddDiscreteProcess(theMicroE
189
190 G4MicroElecElastic* theMicroElecElasticProce
191 theMicroElecElasticProcess->SetEmModel
192 // G4MicroElecElasticModel_new* mod = n
193 //theMicroElecElasticProcess->AddEmMod
194 pmanager->AddDiscreteProcess(theMicroE
195
196 // MicroElec ionisation is not active in
197 /*G4MicroElecInelastic* microelecioni =
198 microelecioni->SetEmModel(new G4DummyMod
199 pmanager->AddDiscreteProcess(microelecio
200
201 G4MicroElecInelastic* microelecioni = ne
202 microelecioni->SetEmModel(new G4DummyMod
203 pmanager->AddDiscreteProcess(microelecio
204
205 //Phonons for SiO2
206
207 G4MicroElecLOPhononScattering* opticalPhon
208 opticalPhonon->SetEmModel(new G4DummyModel
209 pmanager->AddDiscreteProcess(opticalPhonon
210
211 /*G4LOPhononScattering* LO60 = new G4LOPho
212 LO60->SetEmModel(new G4DummyModel(), 1);
213 pmanager->AddDiscreteProcess(LO60);//*/
214
215
216
217 G4MicroElecSurface* MicroElecSurf = new G4
218 MicroElecSurf->SetProcessManager(pmanager)
219 pmanager->AddDiscreteProcess(MicroElecSurf
220
221 ElectronCapture* ecap = new ElectronCaptu
222 pmanager->AddDiscreteProcess(ecap);//*/
223
224 } else if ( particleName == "proton" ) {
225
226 // STANDARD msc is active in the world
227 /*G4hMultipleScattering* msc = new G4hMu
228 msc->AddEmModel(1, new G4UrbanMscModel()
229 pmanager->AddProcess(msc, -1, 1, -1);*/
230
231
232 // STANDARD ionisation is active in the
233 G4hIonisation* hion = new G4hIonisation(
234 pmanager->AddProcess(hion, -1, 2, 2);
235
236 // Dielectric ionisation is not active i
237 G4MicroElecInelastic* dielectricioni = n
238 dielectricioni->SetEmModel(new G4DummyMo
239 //dielectricioni->SetEmModel(new G4Dummy
240 pmanager->AddDiscreteProcess(dielectrici
241
242 } else if(particleName == "alpha") {
243
244
245 // STANDARD ionisation is active in the
246 G4ionIonisation* hion = new G4ionIonisat
247 pmanager->AddProcess(hion, -1, 2, 2);
248 // Dielectric ionisation is not active i
249 G4MicroElecInelastic* dielectricioni = new
250 dielectricioni->SetEmModel(new G4DummyMode
251 dielectricioni->SetEmModel(new G4DummyMode
252 pmanager->AddDiscreteProcess(dielectricion
253
254 } else if (particleName == "GenericIon") {
255
256 // STANDARD msc is active in the world
257 /*G4hMultipleScattering* msc = new G4hMu
258 msc->AddEmModel(1, new G4UrbanMscModel()
259 pmanager->AddProcess(new G4hMultipleScat
260
261 /*G4CoulombScattering* cs = new G4Coulom
262 cs->AddEmModel(0, new G4IonCoulombScatte
263 cs->SetBuildTableFlag(false);
264 pmanager->AddDiscreteProcess(cs);*/
265
266
267
268 // STANDARD ionisation is active in the
269 G4ionIonisation* hion = new G4ionIonisat
270 pmanager->AddProcess(hion, -1, 2, 2);
271
272 // Dielectric ionisation is not actived
273 G4MicroElecInelastic* dielectricioni = n
274 dielectricioni->SetEmModel(new G4DummyMo
275 dielectricioni->SetEmModel(new G4DummyMo
276 pmanager->AddDiscreteProcess(dielectrici
277 }
278 }
279
280 // **************************************
281 // 2) Define processes for Target region
282 // **************************************
283
284 // STANDARD EM processes should be inactivat
285 // - STANDARD EM e- processes are inactivate
286 // - STANDARD EM proton & ion processes are
287 //
288 G4EmConfigurator* em_config = G4LossTableMan
289
290 G4VEmModel* mod;
291 // *** e-
292
293 // ---> STANDARD EM processes are inactivate
294
295 G4UrbanMscModel* msc = new G4UrbanMscModel(
296 msc->SetActivationLowEnergyLimit(100*MeV);
297 em_config->SetExtraEmModel("e-","msc",msc,"T
298
299
300 mod = new G4MollerBhabhaModel();
301 mod->SetActivationLowEnergyLimit(10*MeV);
302 em_config->SetExtraEmModel("e-","eIoni",mod,
303
304
305 // ---> MicroElec processes activated
306
307
308 mod = new G4MicroElecElasticModel_new();
309 em_config->SetExtraEmModel("e-","e-_G4MicroE
310
311 mod = new G4MicroElecInelasticModel_new();
312 em_config->SetExtraEmModel("e-","e-_G4Dielec
313
314 // G4double hw = 0.15*eV;
315
316 //Old phonon
317
318 /*mod = new LOPhononModel(0.153*eV,false);
319 em_config->SetExtraEmModel("e-", "e-_G4LOPho
320
321 mod = new LOPhononModel(0.063*eV,false);
322 em_config->SetExtraEmModel("e-", "e-_G4LO60"
323
324 //Phonons LO pour sio2 et al2o3
325
326 mod = new G4MicroElecLOPhononModel();
327 em_config->SetExtraEmModel("e-", "e-_G4LOPho
328
329
330 // *** proton ------------------------------
331
332 // ---> STANDARD EM processes inactivated be
333
334 // STANDARD msc is still active
335 // Inactivate following STANDARD processes
336
337 // il faut desactiver Bragg puisque notre mo
338 /*mod = new G4BraggModel();
339 mod->SetActivationHighEnergyLimit(50*keV);
340 em_config->SetExtraEmModel("proton","hIoni",
341
342 mod = new G4BetheBlochModel();
343 mod->SetActivationLowEnergyLimit(10*MeV);
344 em_config->SetExtraEmModel("proton","hIoni",
345
346 // ---> Dielectric processes activated
347
348
349 mod = new G4MicroElecInelasticModel_new();
350 mod->SetActivationLowEnergyLimit(100*eV);
351 em_config->SetExtraEmModel("proton","p_G4Die
352 //em_config->SetExtraEmModel("proton","p_G4D
353
354 //*/
355
356
357 // *** alpha -------------------------------
358 mod = new G4BetheBlochModel();
359 mod->SetActivationLowEnergyLimit(10*MeV);
360 em_config->SetExtraEmModel("alpha","ionIoni"
361
362 /*mod = new G4MicroElecInelasticModel_new();
363 //mod->SetActivationLowEnergyLimit(100*eV);
364 em_config->SetExtraEmModel("alpha","alpha_G4
365
366 // *** ion ---------------------------------
367
368 // ---> STANDARD EM processes inactivated be
369
370 // STANDARD msc is still active
371 // Inactivate following STANDARD processes
372
373
374 /*mod = new G4BraggIonModel();
375 mod->SetActivationHighEnergyLimit(50*keV);
376 em_config->SetExtraEmModel("GenericIon","ion
377
378 mod = new G4BetheBlochModel();
379 mod->SetActivationLowEnergyLimit(10*MeV);
380 em_config->SetExtraEmModel("GenericIon","ion
381
382 // ---> Dielectric processes activated
383 mod = new G4MicroElecInelasticModel_new();
384 mod->SetActivationLowEnergyLimit(100*eV);
385 em_config->SetExtraEmModel("GenericIon","ion
386 //em_config->SetExtraEmModel("GenericIon","i
387
388 // Deexcitation
389 //
390 G4VAtomDeexcitation* de = new G4UAtomicDeexc
391 G4LossTableManager::Instance()->SetAtomDeexc
392 de->SetFluo(true);
393 de->SetAuger(true);
394 de->SetPIXE(true);
395 de->InitialiseForNewRun();
396
397 // G4ProductionCutsTable::GetProductionCutsTa
398
399 }
400
401 //....oooOO0OOooo........oooOO0OOooo........oo
402
403 void MicroElecPhysics::ConstructGeneral()
404 { }
405
406 //....oooOO0OOooo........oooOO0OOooo........oo
407
408 void MicroElecPhysics::SetCuts()
409 {
410 if (verboseLevel >0)
411 {
412 G4cout << "MicroElecPhysics::SetCuts:";
413 G4cout << "CutLength : " << G4BestUnit(def
414 }
415
416 // set cut values for gamma at first and for
417 // because some processes for e+/e- need cut
418 SetCutValue(cutForGamma, "gamma");
419 SetCutValue(cutForElectron, "e-");
420 SetCutValue(cutForPositron, "e+");
421 SetCutValue(cutForProton, "proton");
422
423 if (verboseLevel>0) { DumpCutValuesTable();
424 }
425