| Geant4 Cross Reference |
1 // 1 //
2 // ******************************************* 2 // ********************************************************************
3 // * License and Disclaimer 3 // * License and Disclaimer *
4 // * 4 // * *
5 // * The Geant4 software is copyright of th 5 // * The Geant4 software is copyright of the Copyright Holders of *
6 // * the Geant4 Collaboration. It is provided 6 // * the Geant4 Collaboration. It is provided under the terms and *
7 // * conditions of the Geant4 Software License 7 // * conditions of the Geant4 Software License, included in the file *
8 // * LICENSE and available at http://cern.ch/ 8 // * LICENSE and available at http://cern.ch/geant4/license . These *
9 // * include a list of copyright holders. 9 // * include a list of copyright holders. *
10 // * 10 // * *
11 // * Neither the authors of this software syst 11 // * Neither the authors of this software system, nor their employing *
12 // * institutes,nor the agencies providing fin 12 // * institutes,nor the agencies providing financial support for this *
13 // * work make any representation or warran 13 // * work make any representation or warranty, express or implied, *
14 // * regarding this software system or assum 14 // * regarding this software system or assume any liability for its *
15 // * use. Please see the license in the file 15 // * use. Please see the license in the file LICENSE and URL above *
16 // * for the full disclaimer and the limitatio 16 // * for the full disclaimer and the limitation of liability. *
17 // * 17 // * *
18 // * This code implementation is the result 18 // * This code implementation is the result of the scientific and *
19 // * technical work of the GEANT4 collaboratio 19 // * technical work of the GEANT4 collaboration. *
20 // * By using, copying, modifying or distri 20 // * By using, copying, modifying or distributing the software (or *
21 // * any work based on the software) you ag 21 // * any work based on the software) you agree to acknowledge its *
22 // * use in resulting scientific publicati 22 // * use in resulting scientific publications, and indicate your *
23 // * acceptance of all terms of the Geant4 Sof 23 // * acceptance of all terms of the Geant4 Software license. *
24 // ******************************************* 24 // ********************************************************************
25 // 25 //
26 // ------------------------------------------- 26 // -------------------------------------------------------------------
27 // ------------------------------------------- 27 // -------------------------------------------------------------------
28 28
29 //....oooOO0OOooo........oooOO0OOooo........oo 29 //....oooOO0OOooo........oooOO0OOooo........oooOO0OOooo........oooOO0OOooo....
30 30
31 //....oooOO0OOooo........oooOO0OOooo........oo 31 //....oooOO0OOooo........oooOO0OOooo........oooOO0OOooo........oooOO0OOooo....
32 32
33 #include "MicroElecPhysics.hh" 33 #include "MicroElecPhysics.hh"
34 #include "G4SystemOfUnits.hh" 34 #include "G4SystemOfUnits.hh"
35 35
36 36
37 // Geant4-MicroElec MODELS 37 // Geant4-MicroElec MODELS
38 38
39 #include "G4MicroElecElastic.hh" 39 #include "G4MicroElecElastic.hh"
40 #include "G4MicroElecElasticModel_new.hh" 40 #include "G4MicroElecElasticModel_new.hh"
41 41
42 #include "G4MicroElecInelastic.hh" 42 #include "G4MicroElecInelastic.hh"
43 #include "G4MicroElecInelasticModel_new.hh" 43 #include "G4MicroElecInelasticModel_new.hh"
44 44
45 #include "G4MicroElecLOPhononScattering.hh" 45 #include "G4MicroElecLOPhononScattering.hh"
46 #include "G4MicroElecLOPhononModel.hh" 46 #include "G4MicroElecLOPhononModel.hh"
47 #include "G4MicroElecSurface.hh" 47 #include "G4MicroElecSurface.hh"
48 48
49 // 49 //
50 50
51 #include "G4LossTableManager.hh" 51 #include "G4LossTableManager.hh"
52 #include "G4EmConfigurator.hh" 52 #include "G4EmConfigurator.hh"
53 #include "G4VEmModel.hh" 53 #include "G4VEmModel.hh"
54 #include "G4DummyModel.hh" 54 #include "G4DummyModel.hh"
55 #include "G4eIonisation.hh" 55 #include "G4eIonisation.hh"
56 #include "G4hIonisation.hh" 56 #include "G4hIonisation.hh"
57 #include "G4ionIonisation.hh" 57 #include "G4ionIonisation.hh"
58 #include "G4eMultipleScattering.hh" 58 #include "G4eMultipleScattering.hh"
59 #include "G4hMultipleScattering.hh" 59 #include "G4hMultipleScattering.hh"
60 #include "G4BraggModel.hh" 60 #include "G4BraggModel.hh"
61 #include "G4BraggIonModel.hh" 61 #include "G4BraggIonModel.hh"
62 #include "G4BetheBlochModel.hh" 62 #include "G4BetheBlochModel.hh"
63 #include "G4UrbanMscModel.hh" 63 #include "G4UrbanMscModel.hh"
64 #include "G4MollerBhabhaModel.hh" 64 #include "G4MollerBhabhaModel.hh"
65 #include "G4IonFluctuations.hh" 65 #include "G4IonFluctuations.hh"
66 #include "G4UniversalFluctuation.hh" 66 #include "G4UniversalFluctuation.hh"
67 67
68 #include "ElectronCapture.hh" 68 #include "ElectronCapture.hh"
69 69
70 #include "G4UAtomicDeexcitation.hh" 70 #include "G4UAtomicDeexcitation.hh"
71 71
72 72
73 73
74 //....oooOO0OOooo........oooOO0OOooo........oo 74 //....oooOO0OOooo........oooOO0OOooo........oooOO0OOooo........oooOO0OOooo....
75 75
76 MicroElecPhysics::MicroElecPhysics(): G4VUser 76 MicroElecPhysics::MicroElecPhysics(): G4VUserPhysicsList()
77 { 77 {
78 defaultCutValue = 1*micrometer; 78 defaultCutValue = 1*micrometer;
79 cutForGamma = defaultCutValue; 79 cutForGamma = defaultCutValue;
80 cutForElectron = defaultCutValue; 80 cutForElectron = defaultCutValue;
81 cutForPositron = defaultCutValue; 81 cutForPositron = defaultCutValue;
82 cutForProton = defaultCutValue; 82 cutForProton = defaultCutValue;
83 83
84 SetVerboseLevel(1); 84 SetVerboseLevel(1);
85 } 85 }
86 86
87 //....oooOO0OOooo........oooOO0OOooo........oo 87 //....oooOO0OOooo........oooOO0OOooo........oooOO0OOooo........oooOO0OOooo....
88 88
89 MicroElecPhysics::~MicroElecPhysics() 89 MicroElecPhysics::~MicroElecPhysics()
90 {} 90 {}
91 91
92 //....oooOO0OOooo........oooOO0OOooo........oo 92 //....oooOO0OOooo........oooOO0OOooo........oooOO0OOooo........oooOO0OOooo....
93 93
94 void MicroElecPhysics::ConstructParticle() 94 void MicroElecPhysics::ConstructParticle()
95 { 95 {
96 ConstructBosons(); 96 ConstructBosons();
97 ConstructLeptons(); 97 ConstructLeptons();
98 ConstructBarions(); 98 ConstructBarions();
99 } 99 }
100 100
101 //....oooOO0OOooo........oooOO0OOooo........oo 101 //....oooOO0OOooo........oooOO0OOooo........oooOO0OOooo........oooOO0OOooo....
102 102
103 void MicroElecPhysics::ConstructBosons() 103 void MicroElecPhysics::ConstructBosons()
104 { 104 {
105 // gamma 105 // gamma
106 G4Gamma::GammaDefinition(); 106 G4Gamma::GammaDefinition();
107 } 107 }
108 //....oooOO0OOooo........oooOO0OOooo........o 108 //....oooOO0OOooo........oooOO0OOooo........oooOO0OOooo........oooOO0OOooo....
109 109
110 void MicroElecPhysics::ConstructLeptons() 110 void MicroElecPhysics::ConstructLeptons()
111 { 111 {
112 // leptons 112 // leptons
113 G4Electron::ElectronDefinition(); 113 G4Electron::ElectronDefinition();
114 G4Positron::PositronDefinition(); 114 G4Positron::PositronDefinition();
115 } 115 }
116 116
117 //....oooOO0OOooo........oooOO0OOooo........oo 117 //....oooOO0OOooo........oooOO0OOooo........oooOO0OOooo........oooOO0OOooo....
118 118
119 void MicroElecPhysics::ConstructBarions() 119 void MicroElecPhysics::ConstructBarions()
120 { 120 {
121 // baryons 121 // baryons
122 G4Proton::ProtonDefinition(); 122 G4Proton::ProtonDefinition();
123 G4GenericIon::GenericIonDefinition(); 123 G4GenericIon::GenericIonDefinition();
124 } 124 }
125 125
126 //....oooOO0OOooo........oooOO0OOooo........oo 126 //....oooOO0OOooo........oooOO0OOooo........oooOO0OOooo........oooOO0OOooo....
127 127
128 void MicroElecPhysics::ConstructProcess() 128 void MicroElecPhysics::ConstructProcess()
129 { 129 {
130 AddTransportation(); 130 AddTransportation();
131 ConstructEM(); 131 ConstructEM();
132 ConstructGeneral(); 132 ConstructGeneral();
133 } 133 }
134 134
135 //....oooOO0OOooo........oooOO0OOooo........oo 135 //....oooOO0OOooo........oooOO0OOooo........oooOO0OOooo........oooOO0OOooo....
136 136
137 137
138 //....oooOO0OOooo........oooOO0OOooo........oo 138 //....oooOO0OOooo........oooOO0OOooo........oooOO0OOooo........oooOO0OOooo....
139 139
140 void MicroElecPhysics::ConstructEM() 140 void MicroElecPhysics::ConstructEM()
141 { 141 {
142 142
143 G4EmParameters* param = G4EmParameters::Inst 143 G4EmParameters* param = G4EmParameters::Instance();
144 //param->SetDefaults(); 144 //param->SetDefaults();
145 param->SetBuildCSDARange(true); 145 param->SetBuildCSDARange(true);
146 //param->SetMscStepLimitType(fUseSafetyPlus) 146 //param->SetMscStepLimitType(fUseSafetyPlus);
147 //param->SetMscStepLimitType(fUseDistanceToB 147 //param->SetMscStepLimitType(fUseDistanceToBoundary);
148 param->SetMscStepLimitType(fUseSafety); 148 param->SetMscStepLimitType(fUseSafety);
149 param->RegionsMicroElec(); 149 param->RegionsMicroElec();
150 // physicList ISS 150 // physicList ISS
151 param->SetDefaults(); 151 param->SetDefaults();
152 param->SetMinEnergy(0.1*eV); 152 param->SetMinEnergy(0.1*eV);
153 param->SetMaxEnergy(10 * TeV); 153 param->SetMaxEnergy(10 * TeV);
154 param->SetLowestElectronEnergy(0 * eV); //<- 154 param->SetLowestElectronEnergy(0 * eV); //<--- Energie de cut dans le vide!!! A fixer 0eV pour ne pas fausser les SEY
155 param->SetNumberOfBinsPerDecade(20); 155 param->SetNumberOfBinsPerDecade(20);
156 param->ActivateAngularGeneratorForIonisation 156 param->ActivateAngularGeneratorForIonisation(true);
157 param->SetAugerCascade(true);//*/ 157 param->SetAugerCascade(true);//*/
158 158
159 auto particleIterator=GetParticleIterator(); 159 auto particleIterator=GetParticleIterator();
160 particleIterator->reset(); 160 particleIterator->reset();
161 161
162 while( (*particleIterator)() ) 162 while( (*particleIterator)() )
163 { 163 {
164 164
165 G4ParticleDefinition* particle = particleI 165 G4ParticleDefinition* particle = particleIterator->value();
166 G4ProcessManager* pmanager = particle->Get 166 G4ProcessManager* pmanager = particle->GetProcessManager();
167 G4String particleName = particle->GetParti 167 G4String particleName = particle->GetParticleName();
168 168
169 // ********************************* 169 // *********************************
170 // 1) Processes for the World region 170 // 1) Processes for the World region
171 // ********************************* 171 // *********************************
172 172
173 if (particleName == "e-") { 173 if (particleName == "e-") {
174 174
175 175
176 // STANDARD msc is active in the world 176 // STANDARD msc is active in the world
177 G4eMultipleScattering* msc = new G4eMult 177 G4eMultipleScattering* msc = new G4eMultipleScattering();
178 msc->AddEmModel(1, new G4UrbanMscModel() 178 msc->AddEmModel(1, new G4UrbanMscModel());
179 pmanager->AddProcess(msc, -1, 1, -1); 179 pmanager->AddProcess(msc, -1, 1, -1);
180 180
181 // STANDARD ionisation is active in the 181 // STANDARD ionisation is active in the world
182 G4eIonisation* eion = new G4eIonisation( 182 G4eIonisation* eion = new G4eIonisation();
183 pmanager->AddProcess(eion, -1, 2, 2); 183 pmanager->AddProcess(eion, -1, 2, 2);
184 184
185 // MicroElec elastic is not active in th 185 // MicroElec elastic is not active in the world
186 //G4MicroElecElasticCorrected* theMicroE 186 //G4MicroElecElasticCorrected* theMicroElecElasticProcess = new G4MicroElecElasticCorrected("e-_G4MicroElecElastic");
187 //theMicroElecElasticProcess->SetEmModel 187 //theMicroElecElasticProcess->SetEmModel(new G4DummyModel(),1);
188 //pmanager->AddDiscreteProcess(theMicroE 188 //pmanager->AddDiscreteProcess(theMicroElecElasticProcess);
189 189
190 G4MicroElecElastic* theMicroElecElasticProce 190 G4MicroElecElastic* theMicroElecElasticProcess = new G4MicroElecElastic("e-_G4MicroElecElastic");
191 theMicroElecElasticProcess->SetEmModel 191 theMicroElecElasticProcess->SetEmModel(new G4DummyModel(),1);
192 // G4MicroElecElasticModel_new* mod = n 192 // G4MicroElecElasticModel_new* mod = new G4MicroElecElasticModel_new();
193 //theMicroElecElasticProcess->AddEmMod 193 //theMicroElecElasticProcess->AddEmModel(0,mod);
194 pmanager->AddDiscreteProcess(theMicroE 194 pmanager->AddDiscreteProcess(theMicroElecElasticProcess);
195 195
196 // MicroElec ionisation is not active in 196 // MicroElec ionisation is not active in the world
197 /*G4MicroElecInelastic* microelecioni = 197 /*G4MicroElecInelastic* microelecioni = new G4MicroElecInelastic("e-_G4MicroElecInelastic");
198 microelecioni->SetEmModel(new G4DummyMod 198 microelecioni->SetEmModel(new G4DummyModel(),1);
199 pmanager->AddDiscreteProcess(microelecio 199 pmanager->AddDiscreteProcess(microelecioni);*/
200 200
201 G4MicroElecInelastic* microelecioni = ne 201 G4MicroElecInelastic* microelecioni = new G4MicroElecInelastic("e-_G4Dielectrics");
202 microelecioni->SetEmModel(new G4DummyMod 202 microelecioni->SetEmModel(new G4DummyModel(),1);
203 pmanager->AddDiscreteProcess(microelecio 203 pmanager->AddDiscreteProcess(microelecioni);
204 204
205 //Phonons for SiO2 205 //Phonons for SiO2
206 206
207 G4MicroElecLOPhononScattering* opticalPhon 207 G4MicroElecLOPhononScattering* opticalPhonon = new G4MicroElecLOPhononScattering("e-_G4LOPhononScattering");
208 opticalPhonon->SetEmModel(new G4DummyModel 208 opticalPhonon->SetEmModel(new G4DummyModel(), 1);
209 pmanager->AddDiscreteProcess(opticalPhonon 209 pmanager->AddDiscreteProcess(opticalPhonon);
210 210
211 /*G4LOPhononScattering* LO60 = new G4LOPho 211 /*G4LOPhononScattering* LO60 = new G4LOPhononScattering("e-_G4LO60");
212 LO60->SetEmModel(new G4DummyModel(), 1); 212 LO60->SetEmModel(new G4DummyModel(), 1);
213 pmanager->AddDiscreteProcess(LO60);//*/ 213 pmanager->AddDiscreteProcess(LO60);//*/
214 214
215 215
216 216
217 G4MicroElecSurface* MicroElecSurf = new G4 217 G4MicroElecSurface* MicroElecSurf = new G4MicroElecSurface("e-_G4MicroElecSurface");
218 MicroElecSurf->SetProcessManager(pmanager) 218 MicroElecSurf->SetProcessManager(pmanager);
219 pmanager->AddDiscreteProcess(MicroElecSurf 219 pmanager->AddDiscreteProcess(MicroElecSurf);//*/
220 220
221 ElectronCapture* ecap = new ElectronCaptu 221 ElectronCapture* ecap = new ElectronCapture("Target",0.9*eV); //<--- Piges pour Al2O3
222 pmanager->AddDiscreteProcess(ecap);//*/ 222 pmanager->AddDiscreteProcess(ecap);//*/
223 223
224 } else if ( particleName == "proton" ) { 224 } else if ( particleName == "proton" ) {
225 225
226 // STANDARD msc is active in the world 226 // STANDARD msc is active in the world
227 /*G4hMultipleScattering* msc = new G4hMu 227 /*G4hMultipleScattering* msc = new G4hMultipleScattering();
228 msc->AddEmModel(1, new G4UrbanMscModel() 228 msc->AddEmModel(1, new G4UrbanMscModel());
229 pmanager->AddProcess(msc, -1, 1, -1);*/ 229 pmanager->AddProcess(msc, -1, 1, -1);*/
230 230
231 231
232 // STANDARD ionisation is active in the 232 // STANDARD ionisation is active in the world
233 G4hIonisation* hion = new G4hIonisation( 233 G4hIonisation* hion = new G4hIonisation();
234 pmanager->AddProcess(hion, -1, 2, 2); 234 pmanager->AddProcess(hion, -1, 2, 2);
235 235
236 // Dielectric ionisation is not active i 236 // Dielectric ionisation is not active in the world
237 G4MicroElecInelastic* dielectricioni = n 237 G4MicroElecInelastic* dielectricioni = new G4MicroElecInelastic("p_G4Dielectrics");
238 dielectricioni->SetEmModel(new G4DummyMo 238 dielectricioni->SetEmModel(new G4DummyModel(),1);
239 //dielectricioni->SetEmModel(new G4Dummy 239 //dielectricioni->SetEmModel(new G4DummyModel(),2);
240 pmanager->AddDiscreteProcess(dielectrici 240 pmanager->AddDiscreteProcess(dielectricioni);
241 241
242 } else if(particleName == "alpha") { 242 } else if(particleName == "alpha") {
243 243
244 244
245 // STANDARD ionisation is active in the 245 // STANDARD ionisation is active in the world
246 G4ionIonisation* hion = new G4ionIonisat 246 G4ionIonisation* hion = new G4ionIonisation();
247 pmanager->AddProcess(hion, -1, 2, 2); 247 pmanager->AddProcess(hion, -1, 2, 2);
248 // Dielectric ionisation is not active i 248 // Dielectric ionisation is not active in the world
249 G4MicroElecInelastic* dielectricioni = new 249 G4MicroElecInelastic* dielectricioni = new G4MicroElecInelastic("alpha_G4Dielectrics");
250 dielectricioni->SetEmModel(new G4DummyMode 250 dielectricioni->SetEmModel(new G4DummyModel(),1);
251 dielectricioni->SetEmModel(new G4DummyMode 251 dielectricioni->SetEmModel(new G4DummyModel(),2);
252 pmanager->AddDiscreteProcess(dielectricion 252 pmanager->AddDiscreteProcess(dielectricioni);
253 253
254 } else if (particleName == "GenericIon") { 254 } else if (particleName == "GenericIon") {
255 255
256 // STANDARD msc is active in the world 256 // STANDARD msc is active in the world
257 /*G4hMultipleScattering* msc = new G4hMu 257 /*G4hMultipleScattering* msc = new G4hMultipleScattering();
258 msc->AddEmModel(1, new G4UrbanMscModel() 258 msc->AddEmModel(1, new G4UrbanMscModel());
259 pmanager->AddProcess(new G4hMultipleScat 259 pmanager->AddProcess(new G4hMultipleScattering, -1, 1, -1);*/
260 260
261 /*G4CoulombScattering* cs = new G4Coulom 261 /*G4CoulombScattering* cs = new G4CoulombScattering();
262 cs->AddEmModel(0, new G4IonCoulombScatte 262 cs->AddEmModel(0, new G4IonCoulombScatteringModel());
263 cs->SetBuildTableFlag(false); 263 cs->SetBuildTableFlag(false);
264 pmanager->AddDiscreteProcess(cs);*/ 264 pmanager->AddDiscreteProcess(cs);*/
265 265
266 266
267 267
268 // STANDARD ionisation is active in the 268 // STANDARD ionisation is active in the world
269 G4ionIonisation* hion = new G4ionIonisat 269 G4ionIonisation* hion = new G4ionIonisation();
270 pmanager->AddProcess(hion, -1, 2, 2); 270 pmanager->AddProcess(hion, -1, 2, 2);
271 271
272 // Dielectric ionisation is not actived 272 // Dielectric ionisation is not actived in the world
273 G4MicroElecInelastic* dielectricioni = n 273 G4MicroElecInelastic* dielectricioni = new G4MicroElecInelastic("ion_G4Dielectrics");
274 dielectricioni->SetEmModel(new G4DummyMo 274 dielectricioni->SetEmModel(new G4DummyModel(),1);
275 dielectricioni->SetEmModel(new G4DummyMo 275 dielectricioni->SetEmModel(new G4DummyModel(),2);
276 pmanager->AddDiscreteProcess(dielectrici 276 pmanager->AddDiscreteProcess(dielectricioni);
277 } 277 }
278 } 278 }
279 279
280 // ************************************** 280 // **************************************
281 // 2) Define processes for Target region 281 // 2) Define processes for Target region
282 // ************************************** 282 // **************************************
283 283
284 // STANDARD EM processes should be inactivat 284 // STANDARD EM processes should be inactivated when corresponding MicroElec processes are used
285 // - STANDARD EM e- processes are inactivate 285 // - STANDARD EM e- processes are inactivated below 100 MeV
286 // - STANDARD EM proton & ion processes are 286 // - STANDARD EM proton & ion processes are inactivated below standEnergyLimit
287 // 287 //
288 G4EmConfigurator* em_config = G4LossTableMan 288 G4EmConfigurator* em_config = G4LossTableManager::Instance()->EmConfigurator();
289 289
290 G4VEmModel* mod; 290 G4VEmModel* mod;
291 // *** e- 291 // *** e-
292 292
293 // ---> STANDARD EM processes are inactivate 293 // ---> STANDARD EM processes are inactivated below 100 MeV
294 294
295 G4UrbanMscModel* msc = new G4UrbanMscModel( 295 G4UrbanMscModel* msc = new G4UrbanMscModel();
296 msc->SetActivationLowEnergyLimit(100*MeV); 296 msc->SetActivationLowEnergyLimit(100*MeV);
297 em_config->SetExtraEmModel("e-","msc",msc,"T 297 em_config->SetExtraEmModel("e-","msc",msc,"Target");
298 298
299 299
300 mod = new G4MollerBhabhaModel(); 300 mod = new G4MollerBhabhaModel();
301 mod->SetActivationLowEnergyLimit(10*MeV); 301 mod->SetActivationLowEnergyLimit(10*MeV);
302 em_config->SetExtraEmModel("e-","eIoni",mod, 302 em_config->SetExtraEmModel("e-","eIoni",mod,"Target",0.0,10*TeV, new G4UniversalFluctuation());
303 303
304 304
305 // ---> MicroElec processes activated 305 // ---> MicroElec processes activated
306 306
307 307
308 mod = new G4MicroElecElasticModel_new(); 308 mod = new G4MicroElecElasticModel_new();
309 em_config->SetExtraEmModel("e-","e-_G4MicroE 309 em_config->SetExtraEmModel("e-","e-_G4MicroElecElastic",mod,"Target",0.1*eV,100*MeV);
310 310
311 mod = new G4MicroElecInelasticModel_new(); 311 mod = new G4MicroElecInelasticModel_new();
312 em_config->SetExtraEmModel("e-","e-_G4Dielec 312 em_config->SetExtraEmModel("e-","e-_G4Dielectrics",mod,"Target",0.1*eV,10*MeV);
313 313
314 // G4double hw = 0.15*eV; 314 // G4double hw = 0.15*eV;
315 315
316 //Old phonon 316 //Old phonon
317 317
318 /*mod = new LOPhononModel(0.153*eV,false); 318 /*mod = new LOPhononModel(0.153*eV,false);
319 em_config->SetExtraEmModel("e-", "e-_G4LOPho 319 em_config->SetExtraEmModel("e-", "e-_G4LOPhononScattering", mod, "Target", 0.153*eV, 10 * MeV);
320 320
321 mod = new LOPhononModel(0.063*eV,false); 321 mod = new LOPhononModel(0.063*eV,false);
322 em_config->SetExtraEmModel("e-", "e-_G4LO60" 322 em_config->SetExtraEmModel("e-", "e-_G4LO60", mod, "Target", 0.06*eV, 10 * MeV);//*/
323 323
324 //Phonons LO pour sio2 et al2o3 324 //Phonons LO pour sio2 et al2o3
325 325
326 mod = new G4MicroElecLOPhononModel(); 326 mod = new G4MicroElecLOPhononModel();
327 em_config->SetExtraEmModel("e-", "e-_G4LOPho 327 em_config->SetExtraEmModel("e-", "e-_G4LOPhononScattering", mod, "Target", 0.1 * eV, 10 * MeV);//*/
328 328
329 329
330 // *** proton ------------------------------ 330 // *** proton ----------------------------------------------------------
331 331
332 // ---> STANDARD EM processes inactivated be 332 // ---> STANDARD EM processes inactivated below standEnergyLimit
333 333
334 // STANDARD msc is still active 334 // STANDARD msc is still active
335 // Inactivate following STANDARD processes 335 // Inactivate following STANDARD processes
336 336
337 // il faut desactiver Bragg puisque notre mo 337 // il faut desactiver Bragg puisque notre modle descend en-dessous de 50 keV
338 /*mod = new G4BraggModel(); 338 /*mod = new G4BraggModel();
339 mod->SetActivationHighEnergyLimit(50*keV); 339 mod->SetActivationHighEnergyLimit(50*keV);
340 em_config->SetExtraEmModel("proton","hIoni", 340 em_config->SetExtraEmModel("proton","hIoni",mod,"Target",0.0,2*MeV, new G4IonFluctuations());*/
341 341
342 mod = new G4BetheBlochModel(); 342 mod = new G4BetheBlochModel();
343 mod->SetActivationLowEnergyLimit(10*MeV); 343 mod->SetActivationLowEnergyLimit(10*MeV);
344 em_config->SetExtraEmModel("proton","hIoni", 344 em_config->SetExtraEmModel("proton","hIoni",mod,"Target",2*MeV,10*TeV, new G4IonFluctuations());
345 345
346 // ---> Dielectric processes activated 346 // ---> Dielectric processes activated
347 347
348 348
349 mod = new G4MicroElecInelasticModel_new(); 349 mod = new G4MicroElecInelasticModel_new();
350 mod->SetActivationLowEnergyLimit(100*eV); 350 mod->SetActivationLowEnergyLimit(100*eV);
351 em_config->SetExtraEmModel("proton","p_G4Die 351 em_config->SetExtraEmModel("proton","p_G4Dielectrics",mod,"Target",100*eV,10*MeV);
352 //em_config->SetExtraEmModel("proton","p_G4D 352 //em_config->SetExtraEmModel("proton","p_G4Dielectrics",new G4DummyModel,"Target",10*MeV,10*TeV);
353 353
354 //*/ 354 //*/
355 355
356 356
357 // *** alpha ------------------------------- 357 // *** alpha ----------------------------------------------------------
358 mod = new G4BetheBlochModel(); 358 mod = new G4BetheBlochModel();
359 mod->SetActivationLowEnergyLimit(10*MeV); 359 mod->SetActivationLowEnergyLimit(10*MeV);
360 em_config->SetExtraEmModel("alpha","ionIoni" 360 em_config->SetExtraEmModel("alpha","ionIoni",mod,"Target",10*MeV,10*TeV, new G4IonFluctuations());
361 361
362 /*mod = new G4MicroElecInelasticModel_new(); 362 /*mod = new G4MicroElecInelasticModel_new();
363 //mod->SetActivationLowEnergyLimit(100*eV); 363 //mod->SetActivationLowEnergyLimit(100*eV);
364 em_config->SetExtraEmModel("alpha","alpha_G4 364 em_config->SetExtraEmModel("alpha","alpha_G4Dielectrics",mod,"Target",0.0,10*MeV);//*/
365 365
366 // *** ion --------------------------------- 366 // *** ion ----------------------------------------------------------
367 367
368 // ---> STANDARD EM processes inactivated be 368 // ---> STANDARD EM processes inactivated below standEnergyLimit
369 369
370 // STANDARD msc is still active 370 // STANDARD msc is still active
371 // Inactivate following STANDARD processes 371 // Inactivate following STANDARD processes
372 372
373 373
374 /*mod = new G4BraggIonModel(); 374 /*mod = new G4BraggIonModel();
375 mod->SetActivationHighEnergyLimit(50*keV); 375 mod->SetActivationHighEnergyLimit(50*keV);
376 em_config->SetExtraEmModel("GenericIon","ion 376 em_config->SetExtraEmModel("GenericIon","ionIoni",mod,"Target",0.0,2*MeV, new G4IonFluctuations());*/
377 377
378 mod = new G4BetheBlochModel(); 378 mod = new G4BetheBlochModel();
379 mod->SetActivationLowEnergyLimit(10*MeV); 379 mod->SetActivationLowEnergyLimit(10*MeV);
380 em_config->SetExtraEmModel("GenericIon","ion 380 em_config->SetExtraEmModel("GenericIon","ionIoni",mod,"Target",10*MeV,10*TeV, new G4IonFluctuations());
381 381
382 // ---> Dielectric processes activated 382 // ---> Dielectric processes activated
383 mod = new G4MicroElecInelasticModel_new(); 383 mod = new G4MicroElecInelasticModel_new();
384 mod->SetActivationLowEnergyLimit(100*eV); 384 mod->SetActivationLowEnergyLimit(100*eV);
385 em_config->SetExtraEmModel("GenericIon","ion 385 em_config->SetExtraEmModel("GenericIon","ion_G4Dielectrics",mod,"Target",0.0,10*MeV);
386 //em_config->SetExtraEmModel("GenericIon","i 386 //em_config->SetExtraEmModel("GenericIon","ion_G4Dielectrics",new G4DummyModel,"Target",10*GeV,10*TeV);
387 387
388 // Deexcitation 388 // Deexcitation
389 // 389 //
390 G4VAtomDeexcitation* de = new G4UAtomicDeexc 390 G4VAtomDeexcitation* de = new G4UAtomicDeexcitation();
391 G4LossTableManager::Instance()->SetAtomDeexc 391 G4LossTableManager::Instance()->SetAtomDeexcitation(de);
392 de->SetFluo(true); 392 de->SetFluo(true);
393 de->SetAuger(true); 393 de->SetAuger(true);
394 de->SetPIXE(true); 394 de->SetPIXE(true);
395 de->InitialiseForNewRun(); 395 de->InitialiseForNewRun();
396 396
397 // G4ProductionCutsTable::GetProductionCutsTa 397 // G4ProductionCutsTable::GetProductionCutsTable()->SetEnergyRange(5*eV, 100.0*GeV);
398 398
399 } 399 }
400 400
401 //....oooOO0OOooo........oooOO0OOooo........oo 401 //....oooOO0OOooo........oooOO0OOooo........oooOO0OOooo........oooOO0OOooo....
402 402
403 void MicroElecPhysics::ConstructGeneral() 403 void MicroElecPhysics::ConstructGeneral()
404 { } 404 { }
405 405
406 //....oooOO0OOooo........oooOO0OOooo........oo 406 //....oooOO0OOooo........oooOO0OOooo........oooOO0OOooo........oooOO0OOooo....
407 407
408 void MicroElecPhysics::SetCuts() 408 void MicroElecPhysics::SetCuts()
409 { 409 {
410 if (verboseLevel >0) 410 if (verboseLevel >0)
411 { 411 {
412 G4cout << "MicroElecPhysics::SetCuts:"; 412 G4cout << "MicroElecPhysics::SetCuts:";
413 G4cout << "CutLength : " << G4BestUnit(def 413 G4cout << "CutLength : " << G4BestUnit(defaultCutValue,"Length") << G4endl;
414 } 414 }
415 415
416 // set cut values for gamma at first and for 416 // set cut values for gamma at first and for e- second and next for e+,
417 // because some processes for e+/e- need cut 417 // because some processes for e+/e- need cut values for gamma
418 SetCutValue(cutForGamma, "gamma"); 418 SetCutValue(cutForGamma, "gamma");
419 SetCutValue(cutForElectron, "e-"); 419 SetCutValue(cutForElectron, "e-");
420 SetCutValue(cutForPositron, "e+"); 420 SetCutValue(cutForPositron, "e+");
421 SetCutValue(cutForProton, "proton"); 421 SetCutValue(cutForProton, "proton");
422 422
423 if (verboseLevel>0) { DumpCutValuesTable(); 423 if (verboseLevel>0) { DumpCutValuesTable(); }
424 } 424 }
425 425