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25 //
26 //
27 // G4MicroElecCapture.cc,
28 // 2011/08/29 A.Valentin, M. Raine are with CEA [a]
29 // 2020/05/20 P. Caron, C. Inguimbert are with ONERA [b]
30 // Q. Gibaru is with CEA [a], ONERA [b] and CNES [c]
31 // M. Raine and D. Lambert are with CEA [a]
32 //
33 // A part of this work has been funded by the French space agency(CNES[c])
34 // [a] CEA, DAM, DIF - 91297 ARPAJON, France
35 // [b] ONERA - DPHY, 2 avenue E.Belin, 31055 Toulouse, France
36 // [c] CNES, 18 av.E.Belin, 31401 Toulouse CEDEX, France
37 //
38 // Based on the following publications
39 // - A.Valentin, M. Raine,
40 // Inelastic cross-sections of low energy electrons in silicon
41 // for the simulation of heavy ion tracks with the Geant4-DNA toolkit,
42 // NSS Conf. Record 2010, pp. 80-85
43 // https://doi.org/10.1109/NSSMIC.2010.5873720
44 //
45 // - A.Valentin, M. Raine, M.Gaillardin, P.Paillet
46 // Geant4 physics processes for microdosimetry simulation:
47 // very low energy electromagnetic models for electrons in Silicon,
48 // https://doi.org/10.1016/j.nimb.2012.06.007
49 // NIM B, vol. 288, pp. 66-73, 2012, part A
50 // heavy ions in Si, NIM B, vol. 287, pp. 124-129, 2012, part B
51 // https://doi.org/10.1016/j.nimb.2012.07.028
52 //
53 // - M. Raine, M. Gaillardin, P. Paillet
54 // Geant4 physics processes for silicon microdosimetry simulation:
55 // Improvements and extension of the energy-range validity up to 10 GeV/nucleon
56 // NIM B, vol. 325, pp. 97-100, 2014
57 // https://doi.org/10.1016/j.nimb.2014.01.014
58 //
59 // - J. Pierron, C. Inguimbert, M. Belhaj, T. Gineste, J. Puech, M. Raine
60 // Electron emission yield for low energy electrons:
61 // Monte Carlo simulation and experimental comparison for Al, Ag, and Si
62 // Journal of Applied Physics 121 (2017) 215107.
63 // https://doi.org/10.1063/1.4984761
64 //
65 // - P. Caron,
66 // Study of Electron-Induced Single-Event Upset in Integrated Memory Devices
67 // PHD, 16th October 2019
68 //
69 // - Q.Gibaru, C.Inguimbert, P.Caron, M.Raine, D.Lambert, J.Puech,
70 // Geant4 physics processes for microdosimetry and secondary electron emission simulation :
71 // Extension of MicroElec to very low energies and new materials
72 // NIM B, 2020, in review.
73 //
74 //----------------------------------------------------------------------------
75 //
76 // ClassName: G4MicroElecCapture derivated from G4ElectronCapture (V Ivanchenko)
77 //
78 // Description: The process to kill particles to save CPU
79 //
80 // Author: C. Inguimbert 31 january 2022 derivated from G4ElectronCapture (V.Ivanchenko 31 August 2010)
81 //
82 //----------------------------------------------------------------------------
83 //
84 //....oooOO0OOooo........oooOO0OOooo........oooOO0OOooo........oooOO0OOooo......
85
86 #include "G4MicroElecCapture.hh"
87 #include "G4SystemOfUnits.hh"
88 #include "G4ParticleDefinition.hh"
89 #include "G4Step.hh"
90 #include "G4PhysicalConstants.hh"
91 #include "G4Track.hh"
92 #include "G4Region.hh"
93 #include "G4RegionStore.hh"
94 #include "G4Electron.hh"
95 #include "G4Pow.hh"
96
97 //....oooOO0OOooo........oooOO0OOooo........oooOO0OOooo........oooOO0OOooo......
98
99 G4MicroElecCapture::G4MicroElecCapture(const G4String& regName, G4double ekinlim)
100 : G4VDiscreteProcess("MicroElecCapture", fElectromagnetic), kinEnergyThreshold(ekinlim),
101 regionName(regName), region(0)
102 {
103 if(regName == "" || regName == "world")
104 {
105 regionName = "DefaultRegionForTheWorld";
106 }
107 isInitialised = false;
108 pParticleChange = &fParticleChange;
109 }
110
111 //....oooOO0OOooo........oooOO0OOooo........oooOO0OOooo........oooOO0OOooo......
112
113 G4MicroElecCapture::~G4MicroElecCapture()
114 {
115 for (auto pos = tableWF.cbegin(); pos != tableWF.cend(); ++pos)
116 {
117 G4MicroElecMaterialStructure* table = pos->second;
118 delete table;
119 }
120 }
121
122 //....oooOO0OOooo........oooOO0OOooo........oooOO0OOooo........oooOO0OOooo......
123
124 void G4MicroElecCapture::SetKinEnergyLimit(G4double val)
125 {
126 kinEnergyThreshold = val;
127 }
128 //....oooOO0OOooo........oooOO0OOooo........oooOO0OOooo........oooOO0OOooo......
129
130 void G4MicroElecCapture::BuildPhysicsTable(const G4ParticleDefinition&)
131 {
132 region = (G4RegionStore::GetInstance())->GetRegion(regionName);
133 // if(region && verboseLevel > 0) {
134 G4cout << "### G4MicroElecCapture: Tracking cut E(MeV) = "
135 << kinEnergyThreshold/MeV << " is assigned to " << regionName
136 << G4endl;
137 }
138
139 //....oooOO0OOooo........oooOO0OOooo........oooOO0OOooo........oooOO0OOooo......
140
141 G4bool G4MicroElecCapture::IsApplicable(const G4ParticleDefinition&)
142 {
143 return true;
144 }
145
146 void G4MicroElecCapture::Initialise()
147 {
148 if (isInitialised) { return; }
149
150 G4ProductionCutsTable* theCoupleTable = G4ProductionCutsTable::GetProductionCutsTable();
151 G4int numOfCouples = (G4int)theCoupleTable->GetTableSize();
152 G4cout << numOfCouples << G4endl;
153
154 for (G4int i = 0; i < numOfCouples; ++i)
155 {
156 const G4Material* material = theCoupleTable->GetMaterialCutsCouple(i)->GetMaterial();
157
158 G4cout << "G4Capture, Material " << i + 1 << " / "
159 << numOfCouples << " : " << material->GetName() << G4endl;
160 if (material->GetName() == "Vacuum")
161 {
162 tableWF[material->GetName()] = 0;
163 continue;
164 }
165 G4String mat = material->GetName();
166 G4MicroElecMaterialStructure* str = new G4MicroElecMaterialStructure(mat);
167 tableWF[mat] = str;
168 }
169 isInitialised = true;
170 }
171
172 //....oooOO0OOooo........oooOO0OOooo........oooOO0OOooo........oooOO0OOooo......
173
174 G4VParticleChange* G4MicroElecCapture::PostStepDoIt(const G4Track& aTrack,
175 const G4Step&)
176 {
177 if (!isInitialised) { Initialise(); }
178
179 G4String mat = aTrack.GetMaterial()->GetName();
180 G4int Ztarget = ((*(aTrack.GetMaterial()->GetElementVector()))[0])->GetZasInt();
181 G4int Atarget = ((*(aTrack.GetMaterial()->GetElementVector()))[0])->GetAtomicMassAmu();
182 G4double Nbelements = aTrack.GetMaterial()->GetNumberOfElements();
183 G4double moleculeMass = aTrack.GetMaterial()->GetMassOfMolecule() / amu;
184 auto FractionMass = aTrack.GetMaterial()->GetFractionVector();
185 G4int Zinc = aTrack.GetParticleDefinition()->GetAtomicNumber();
186 G4int Ainc = aTrack.GetParticleDefinition()->GetAtomicMass();
187 G4String IncPartName = aTrack.GetParticleDefinition()->GetParticleName();
188 G4double NIEdep = 0.0;
189
190 for (G4int i = 0; i < Nbelements; ++i)
191 {
192 Ztarget = ((*(aTrack.GetMaterial()->GetElementVector()))[i])->GetZasInt();
193 Atarget = ((*(aTrack.GetMaterial()->GetElementVector()))[i])->GetAtomicMassAmu();
194 NIEdep = NIEdep + moleculeMass*FractionMass[i] / Atarget*G_Lindhard_Rob(aTrack.GetKineticEnergy(), Zinc, Ainc, Ztarget, Atarget);
195 }
196
197 WorkFunctionTable::iterator matWF;
198 matWF = tableWF.find(mat);
199
200 if (matWF == tableWF.end())
201 {
202 G4String str = "Material ";
203 str += mat + " not found!";
204 G4Exception("G4MicroElecCapture::PostStepGPIL", "em0002",
205 FatalException, str);
206 return nullptr;
207 }
208 else
209 {
210 G4MicroElecMaterialStructure* str = matWF->second;
211 pParticleChange->Initialize(aTrack);
212 pParticleChange->ProposeTrackStatus(fStopAndKill);
213
214 G4double InitE = str->GetEnergyGap() + str->GetInitialEnergy();
215
216 if (IncPartName == "e-")
217 {
218 // metals = Non ionizing deposited energy = 0.0
219 if (((str->GetEnergyGap()) / eV)<(0.001))
220 {
221 pParticleChange->ProposeNonIonizingEnergyDeposit(0.0);
222 pParticleChange->ProposeLocalEnergyDeposit(aTrack.GetKineticEnergy());
223 }
224 else // MicroElec materials Non ionizing deposited energy different from zero
225 {
226 G4int c = (G4int)((aTrack.GetKineticEnergy()) / (InitE));
227 pParticleChange->ProposeNonIonizingEnergyDeposit(aTrack.GetKineticEnergy() - InitE*c);
228 pParticleChange->ProposeLocalEnergyDeposit(aTrack.GetKineticEnergy());
229 }
230 }
231 else
232 {
233 if ((IncPartName == "Genericion") || (IncPartName == "alpha")
234 || (IncPartName == "He3") || (IncPartName == "deuteron")
235 || (IncPartName == "triton") || (IncPartName == "proton"))
236 {
237 pParticleChange->ProposeNonIonizingEnergyDeposit(NIEdep);
238 pParticleChange->ProposeLocalEnergyDeposit(aTrack.GetKineticEnergy());
239 }
240 else
241 {
242 pParticleChange->ProposeNonIonizingEnergyDeposit(0.0);
243 pParticleChange->ProposeLocalEnergyDeposit(aTrack.GetKineticEnergy());
244 }
245 }
246 } // matWF == tableWF.end())
247
248 fParticleChange.SetProposedKineticEnergy(0.0);
249 return pParticleChange;
250 }
251
252 //....oooOO0OOooo........oooOO0OOooo........oooOO0OOooo........oooOO0OOooo......
253
254 G4double G4MicroElecCapture::GetMeanFreePath(const G4Track& aTrack, G4double,
255 G4ForceCondition*)
256 {
257 G4String material = aTrack.GetMaterial()->GetName();
258 // test particle type in order to applied the capture to both electrons, protons and heavy ions
259 G4double mfp = DBL_MAX;
260 G4double ekin = aTrack.GetKineticEnergy();
261
262 if (ekin < 500*eV && aTrack.GetParticleDefinition()->GetParticleName() == "e-")
263 {
264 if (material != "G4_ALUMINUM_OXIDE" && material != "G4_SILICON_DIOXIDE"
265 && material != "G4_BORON_NITRIDE")
266 {
267 return DBL_MAX;
268 }
269 G4double S = 0;
270 G4double y = 0;
271 if (material == "G4_ALUMINUM_OXIDE")
272 {
273 S = 1 * (1 / nm);
274 y = 0.25 * (1 / eV);
275 }
276 if (material == "G4_SILICON_DIOXIDE")
277 {
278 S = 0.3 * (1 / nm);
279 y = 0.2 * (1 / eV);
280 }
281 if (material == "G4_BORON_NITRIDE")
282 {
283 S = 0 * (1 / nm);
284 y = 1 * (1 / eV);
285 }
286
287 // VI: added numerical protection against extrime value of G4Exp argument
288 y *= ekin;
289 if (S > 0.0 && y < 100.0) { mfp = G4Exp(y) / S; }
290 }
291 return mfp;
292 }
293
294 //....oooOO0OOooo........oooOO0OOooo........oooOO0OOooo........oooOO0OOooo......
295
296 G4double G4MicroElecCapture::G_Lindhard_Rob(G4double Trecoil, G4int Zrecoil, G4int Arecoil, G4int Zcible, G4int Acible)
297 {
298 G4double Lind =0.0;
299
300 if (Arecoil <= 0 || Zrecoil == 0)
301 {
302 Lind = 0.0;
303 }
304 else
305 {
306 G4double El = 30.724 * Zcible * Zrecoil
307 * std::pow((G4Pow::GetInstance()->Z23(Zcible) + G4Pow::GetInstance()->Z23(Zrecoil)), 0.5)
308 * (Arecoil + Acible) / Acible;
309
310 // multiplication by 1e6 to change El from eV to MeV
311 G4double e = Trecoil / (El * CLHEP::eV);
312 G4double Fl = (0.0793 * G4Pow::GetInstance()->Z23(Zrecoil) * std::pow(Zcible, 0.5) * std::pow((Arecoil + Acible), 1.5))
313 / (std::pow((G4Pow::GetInstance()->Z23(Zcible) + G4Pow::GetInstance()->Z23(Zrecoil)), 3. / 4.) * std::pow(Arecoil, 3. / 2.) * std::pow(Acible, 1. / 2.));
314
315 Lind = 1. / (1 + Fl * (3.4008 * std::pow(e, 1. / 6.) + 0.40244 * std::pow(e, 3. / 4.) + e));
316
317 // to get the energie that go into displacement
318 Lind = Lind * Trecoil;
319 }
320 return Lind;
321 }
322