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25
26 // G4MicroElecSiStructure.cc, 2011/08/29 A.Valentin, M. Raine
27 //
28 // Based on the following publications
29 //
30 // - Inelastic cross-sections of low energy electrons in silicon
31 // for the simulation of heavy ion tracks with theGeant4-DNA toolkit,
32 // NSS Conf. Record 2010, pp. 80-85.
33 // - Geant4 physics processes for microdosimetry simulation:
34 // very low energy electromagnetic models for electrons in Si,
35 // NIM B, vol. 288, pp. 66 - 73, 2012.
36 // - Geant4 physics processes for microdosimetry simulation:
37 // very low energy electromagnetic models for protons and
38 // heavy ions in Si, NIM B, vol. 287, pp. 124 - 129, 2012.
39 //
40
41 #include "G4MicroElecSiStructure.hh"
42
43 #include "G4SystemOfUnits.hh"
44
45 G4MicroElecSiStructure::G4MicroElecSiStructure()
46 {
47 energyConstant.push_back(16.65 * eV);
48 energyConstant.push_back(6.52 * eV);
49 energyConstant.push_back(13.63 * eV);
50 energyConstant.push_back(107.98 * eV);
51 energyConstant.push_back(151.55 * eV);
52 energyConstant.push_back(1828.5 * eV);
53
54 nLevels = (G4int)energyConstant.size();
55 }
56
57 G4double G4MicroElecSiStructure::Energy(G4int level)
58 {
59 G4double energ = 0.;
60
61 if (level >= 0 && level < nLevels) {
62 energ = energyConstant[level];
63 }
64
65 return energ;
66 }
67