Geant4 Cross Reference

Cross-Referencing   Geant4
Geant4/materials/include/G4MicroElecSiStructure.hh

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 25 
 26 // G4MicroElecSiStructure.hh, 2011/08/29 A.Valentin, M. Raine
 27 //
 28 // Based on the following publications
 29 //
 30 //          - Inelastic cross-sections of low energy electrons in silicon
 31 //      for the simulation of heavy ion tracks with theGeant4-DNA toolkit,
 32 //      NSS Conf. Record 2010, pp. 80-85
 33 //      - Geant4 physics processes for microdosimetry simulation:
 34 //      very low energy electromagnetic models for electrons in Si,
 35 //      NIM B, vol. 288, pp. 66-73, 2012.
 36 //      - Geant4 physics processes for microdosimetry simulation:
 37 //      very low energy electromagnetic models for protons and
 38 //      heavy ions in Si, NIM B, vol. 287, pp. 124-129, 2012.
 39 
 40 #ifndef G4MICROELECSISTRUCTURE_HH
 41 #define G4MICROELECSISTRUCTURE_HH 1
 42 
 43 #include "globals.hh"
 44 
 45 #include <vector>
 46 
 47 class G4MicroElecSiStructure
 48 {
 49  public:
 50   G4MicroElecSiStructure();
 51 
 52   virtual ~G4MicroElecSiStructure() = default;
 53 
 54   G4double Energy(G4int level);
 55 
 56   G4int NumberOfLevels() { return nLevels; }
 57 
 58  private:
 59   G4int nLevels{6};  // Number of levels of silicon
 60 
 61   std::vector<G4double> energyConstant;
 62 };
 63 
 64 #endif
 65