| Geant4 Cross Reference |
1 //
2 // ********************************************************************
3 // * License and Disclaimer *
4 // * *
5 // * The Geant4 software is copyright of the Copyright Holders of *
6 // * the Geant4 Collaboration. It is provided under the terms and *
7 // * conditions of the Geant4 Software License, included in the file *
8 // * LICENSE and available at http://cern.ch/geant4/license . These *
9 // * include a list of copyright holders. *
10 // * *
11 // * Neither the authors of this software system, nor their employing *
12 // * institutes,nor the agencies providing financial support for this *
13 // * work make any representation or warranty, express or implied, *
14 // * regarding this software system or assume any liability for its *
15 // * use. Please see the license in the file LICENSE and URL above *
16 // * for the full disclaimer and the limitation of liability. *
17 // * *
18 // * This code implementation is the result of the scientific and *
19 // * technical work of the GEANT4 collaboration. *
20 // * By using, copying, modifying or distributing the software (or *
21 // * any work based on the software) you agree to acknowledge its *
22 // * use in resulting scientific publications, and indicate your *
23 // * acceptance of all terms of the Geant4 Software license. *
24 // ********************************************************************
25 //
26 //
27 // G4MicroElecMaterialStructure.cc, 2011/08/29 A.Valentin, M. Raine are with CEA [a]
28 // 2020/05/20 P. Caron, C. Inguimbert are with ONERA [b]
29 // Q. Gibaru is with CEA [a], ONERA [b] and CNES [c]
30 // M. Raine and D. Lambert are with CEA [a]
31 //
32 // A part of this work has been funded by the French space agency(CNES[c])
33 // [a] CEA, DAM, DIF - 91297 ARPAJON, France
34 // [b] ONERA - DPHY, 2 avenue E.Belin, 31055 Toulouse, France
35 // [c] CNES, 18 av.E.Belin, 31401 Toulouse CEDEX, France
36 //
37 // Based on the following publications
38 // - A.Valentin, M. Raine,
39 // Inelastic cross-sections of low energy electrons in silicon
40 // for the simulation of heavy ion tracks with the Geant4-DNA toolkit,
41 // NSS Conf. Record 2010, pp. 80-85
42 // https://doi.org/10.1109/NSSMIC.2010.5873720
43 //
44 // - A.Valentin, M. Raine, M.Gaillardin, P.Paillet
45 // Geant4 physics processes for microdosimetry simulation:
46 // very low energy electromagnetic models for electrons in Silicon,
47 // https://doi.org/10.1016/j.nimb.2012.06.007
48 // NIM B, vol. 288, pp. 66-73, 2012, part A
49 // heavy ions in Si, NIM B, vol. 287, pp. 124-129, 2012, part B
50 // https://doi.org/10.1016/j.nimb.2012.07.028
51 //
52 // - M. Raine, M. Gaillardin, P. Paillet
53 // Geant4 physics processes for silicon microdosimetry simulation:
54 // Improvements and extension of the energy-range validity up to 10 GeV/nucleon
55 // NIM B, vol. 325, pp. 97-100, 2014
56 // https://doi.org/10.1016/j.nimb.2014.01.014
57 //
58 // - J. Pierron, C. Inguimbert, M. Belhaj, T. Gineste, J. Puech, M. Raine
59 // Electron emission yield for low energy electrons:
60 // Monte Carlo simulation and experimental comparison for Al, Ag, and Si
61 // Journal of Applied Physics 121 (2017) 215107.
62 // https://doi.org/10.1063/1.4984761
63 //
64 // - P. Caron,
65 // Study of Electron-Induced Single-Event Upset in Integrated Memory Devices
66 // PHD, 16th October 2019
67 //
68 // - Q.Gibaru, C.Inguimbert, P.Caron, M.Raine, D.Lambert, J.Puech,
69 // Geant4 physics processes for microdosimetry and secondary electron emission simulation :
70 // Extension of MicroElec to very low energies and new materials
71 // NIM B, 2020, in review.
72 //
73 //
74 //....oooOO0OOooo........oooOO0OOooo........oooOO0OOooo........oooOO0OOooo......
75
76 #include "G4MicroElecMaterialStructure.hh"
77 #include "G4EnvironmentUtils.hh"
78 #include "G4SystemOfUnits.hh"
79
80 //....oooOO0OOooo........oooOO0OOooo........oooOO0OOooo........oooOO0OOooo....
81
82 G4MicroElecMaterialStructure::G4MicroElecMaterialStructure(const G4String& matName)
83 {
84 materialName = matName;
85 if (matName == "Vacuum" || matName == "uum") {
86 workFunction = 0;
87 initialEnergy = 0;
88 }
89 else {
90 ReadMaterialFile();
91 }
92 nLevels = (G4int)energyConstant.size();
93 }
94
95
96 //....oooOO0OOooo........oooOO0OOooo........oooOO0OOooo........oooOO0OOooo....
97 void G4MicroElecMaterialStructure::ReadMaterialFile()
98 {
99 const char* path = G4FindDataDir("G4LEDATA");
100
101 if (materialName[0] == 'G' && materialName[1] == '4') {
102 //in the case the NIST database is used
103 materialName.erase(0, 1);
104 materialName.erase(0, 1);
105 materialName.erase(0, 1);
106 }
107
108 std::ostringstream fileName;
109 fileName << path << "/microelec/Structure/Data_" + materialName + ".dat";
110 std::ifstream fichier(fileName.str().c_str());
111
112 int varLength = 0;
113 G4String nameParameter;
114
115 G4String unitName;
116 G4double unitValue;
117 G4double data;
118 G4String filler;
119 G4String type;
120
121 if (fichier)
122 {
123 fichier >> filler >> type;
124 materialName = filler;
125 if (type == "Compound") {isCompound = true; Z = 0; }
126 else { isCompound = false; Z = std::stoi(type); }
127 while(!fichier.eof()) {
128
129 getline(fichier, filler);
130 std::stringstream line(filler);
131
132 if (filler[0] == '#' || filler.empty()) {continue;}
133
134 line >> varLength;
135 line >> nameParameter;
136 line >> unitName;
137 unitValue = ConvertUnit(unitName);
138
139 for (int i = 0; i < varLength; i++)
140 {
141 line >> data; data = data*unitValue;
142
143 if(nameParameter == "WorkFunction")
144 {
145 workFunction = data;
146 }
147 if(nameParameter == "EnergyGap")
148 {
149 energyGap = data;
150 }
151
152 if(nameParameter == "EnergyPeak")
153 {
154 energyConstant.push_back(data);
155 }
156 if(nameParameter == "EnergyLimit")
157 {
158 LimitEnergy.push_back(data);
159 }
160 if(nameParameter == "EADL")
161 {
162 EADL_Enumerator.push_back(data);
163 }
164
165 if (nameParameter == "WeaklyBoundShell")
166 {if (data == 0) { isShellWeaklyBoundVector.push_back(false); }
167 else {isShellWeaklyBoundVector.push_back(true);}}
168
169 if(nameParameter == "WeaklyBoundInitialEnergy")
170 {
171 initialEnergy = data;
172 }
173
174 if(nameParameter == "ShellAtomicNumber")
175 {
176 compoundShellZ.push_back(data);
177 }
178
179 if(nameParameter == "DielectricModelLowEnergyLimit_e")
180 {
181 flimitInelastic[0] = data;
182 }
183 if(nameParameter == "DielectricModelHighEnergyLimit_e")
184 {
185 flimitInelastic[1] = data;
186 }
187 if(nameParameter == "DielectricModelLowEnergyLimit_p")
188 {
189 flimitInelastic[2] = data;
190 }
191 if(nameParameter == "DielectricModelHighEnergyLimit_p")
192 {
193 flimitInelastic[3] = data;
194 }
195
196 if(nameParameter == "ElasticModelLowEnergyLimit")
197 {
198 flimitElastic[0] = data;
199 }
200 if(nameParameter == "ElasticModelHighEnergyLimit")
201 {
202 flimitElastic[1] = data;
203 }
204 }
205 }
206 fichier.close(); // on ferme le fichier
207 }
208 else {
209 G4String str = "file ";
210 str += fileName.str() + " not found!";
211 G4Exception("G4MicroElecMaterialStructure::ReadMaterialFile", "em0002", FatalException, str);
212 }
213 }
214
215 //....oooOO0OOooo........oooOO0OOooo........oooOO0OOooo........oooOO0OOooo....
216
217 G4double G4MicroElecMaterialStructure::Energy(G4int level)
218 {
219 return (level >= 0 && level < nLevels) ? energyConstant[level] : 0.0;
220 }
221
222 //....oooOO0OOooo........oooOO0OOooo........oooOO0OOooo........oooOO0OOooo....
223
224 G4double G4MicroElecMaterialStructure::GetZ(G4int Shell)
225 {
226 if (Shell >= 0 && Shell < nLevels) {
227 if(!isCompound)
228 {
229 return Z;
230 }
231 else
232 {
233 return compoundShellZ[Shell];
234 }
235 }
236 else
237 {
238 return 0;
239 }
240 }
241
242 //....oooOO0OOooo........oooOO0OOooo........oooOO0OOooo........oooOO0OOooo....
243
244 G4double G4MicroElecMaterialStructure::ConvertUnit(const G4String& unitName)
245 {
246 G4double unitValue = 0;
247 if(unitName == "meV")
248 {
249 unitValue = 1e-3 * CLHEP::eV;
250 }
251 else if(unitName == "eV")
252 {
253 unitValue = CLHEP::eV;
254 }
255 else if(unitName == "keV")
256 {
257 unitValue = CLHEP::keV;
258 }
259 else if(unitName == "MeV")
260 {
261 unitValue = CLHEP::MeV;
262 }
263 else if(unitName == "noUnit")
264 {
265 unitValue = 1;
266 }
267
268 return unitValue;
269 }
270
271 //....oooOO0OOooo........oooOO0OOooo........oooOO0OOooo........oooOO0OOooo....
272
273 G4double G4MicroElecMaterialStructure::GetLimitEnergy(G4int level)
274 {
275 G4double E = LimitEnergy[level];
276 if (IsShellWeaklyBound(level)) { E = energyGap+ initialEnergy; }
277 return E;
278 }
279
280 //....oooOO0OOooo........oooOO0OOooo........oooOO0OOooo........oooOO0OOooo....
281
282 G4double G4MicroElecMaterialStructure::GetInelasticModelLowLimit(G4int pdg)
283 {
284 G4double res = 0.0;
285 if(pdg == 11)
286 {
287 res = flimitInelastic[0];
288 }
289 else if(pdg == 2212)
290 {
291 res = flimitInelastic[2];
292 }
293 return res;
294 }
295
296 //....oooOO0OOooo........oooOO0OOooo........oooOO0OOooo........oooOO0OOooo....
297
298 G4double G4MicroElecMaterialStructure::GetInelasticModelHighLimit(G4int pdg)
299 {
300 G4double res = 0.0;
301 if(pdg == 11)
302 {
303 res = flimitInelastic[1];
304 }
305 else if(pdg == 2212)
306 {
307 res = flimitInelastic[3];
308 }
309 return res;
310 }
311
312 //....oooOO0OOooo........oooOO0OOooo........oooOO0OOooo........oooOO0OOooo....
313
314 G4bool G4MicroElecMaterialStructure::IsShellWeaklyBound(G4int level)
315 {
316 return isShellWeaklyBoundVector[level];
317 }
318
319 //....oooOO0OOooo........oooOO0OOooo........oooOO0OOooo........oooOO0OOooo....
320
321