| Geant4 Cross Reference |
1 ------------------------------------------------------------------- 2 ------------------------------------------------------------------- 3 4 ========================================================= 5 Geant4 - Microelectronics example 6 ========================================================= 7 8 README file 9 ---------------------- 10 11 CORRESPONDING AUTHORS 12 13 M. Raine*, D. Lambert*, C. Inguimbert', Q. Gibaru' 14 * CEA, DAM, DIF, F-91297 Arpajon, France 15 ' ONERA, 2 avenue Edouard Belin - BP 74025 - 31055 TOULOUSE, France 16 email: melanie.raine@cea.fr damien.lambert@cea.fr 17 christophe.Inguimbert@onera.fr Quentin.Gibaru@onera.fr 18 19 ---->0. INTRODUCTION. 20 21 The microelectronics example simulates the track of a 5 MeV proton in silicon. 22 Geant4 standard EM models are used in the World volume while Geant4-MicroElec models 23 are used in a Target volume, declared as a Region. 24 25 ---->1. GEOMETRY SET-UP. 26 27 By default, the geometry is a 2 um side cube (World) made of silicon containing 28 a smaller cubic Target volume of silicon (1 um3). 29 The target material can be modified and simulated with G4MicroElecPhysics processes. 30 31 ---->2. SET-UP 32 33 Make sure that the G4EMLOW database version is correct (> or = 7.16) 34 35 The variable G4ANALYSIS_USE must be set to 1. 36 37 The code should be compiled with cmake: 38 $ mkdir microelectronics-build 39 $ cd microelectronics-build 40 $ cmake -DGeant4_DIR=/your_path/geant4-install/ $PATHTOMICROELECEXAMPLE/microelectronics 41 $ make 42 43 It works in MT mode (but in this example today MT=1 due to memory consumption of new Microelec models). 44 45 ---->3. HOW TO RUN THE EXAMPLE 46 47 In interactive mode, run: 48 49 ./microelectronics 50 51 The macro microelectronics.mac is executed by default. 52 53 To get visualization, make sure to uncomment the #/control/execute vis.mac 54 line in the macro. 55 56 By default, the new MicroElec models are used. 57 You can used the Silicon MicroElec models, with the "-onlySi" option: 58 ./microelectronics -onlySi 59 or 60 ./microelectronics microelectronics.mac -onlySi 61 62 You can change the type of the target material 63 (G4_Ag G4_Al G4_C G4_Cu G4_Ge G4_KAPTON G4_Ni G4_Si G4_SILICON_DIOXIDE G4_Ti G4_W), 64 if you uncomment one line (/microelectronics/det/setMat) into the .mac file. 65 66 67 68 ---->4. PHYSICS 69 70 This example shows: 71 - how to use the G4MicroElecPhysics and G4MicroElecSiPhysics processes, 72 - how to affect them a name 73 - how to combine them with Standard EM Physics. 74 75 A simple electron capture process is also provided in order to kill electrons 76 below a chosen energy threshold, set in the Physics list. 77 78 Look at the G4MicroElecSiPhysics.cc (previous silicon MicroElec models) 79 and G4MicroElecPhysics.cc (new MicroElec models) files. 80 81 ---->5. SIMULATION OUTPUT AND RESULT ANALYZIS 82 83 The output results consists in a microelectronics.root file, containing for each simulation step: 84 - the type of particle for the current step 85 - the type of process for the current step 86 - the track position of the current step (in nanometers) 87 - the energy deposit along the current step (in eV) 88 - the step length (in nm) 89 - the total enery loss along the current step (in eV) 90 91 This file can be easily analyzed using for example the provided ROOT macro 92 file plot.C; to do so : 93 * be sure to have ROOT installed on your machine 94 * be sure to be in the microelectronics directory 95 * launch ROOT by typing root 96 * under your ROOT session, type in : .X plot.C to execute the macro file 97 * alternatively you can type directly under your session : root plot.C 98 99 The naming scheme on the displayed ROOT plots is as follows (see SteppingAction.cc): 100 101 -particles: 102 e- : 1 103 proton : 2 104 ion : 3 105 106 -processes: 107 e-_G4MicroElecElastic 11 108 e-_G4MicroElecInelastic 12 109 eCapture 13 110 111 p_G4MicroElecInelastic 14 112 113 ion_G4MicroElecInelastic 15 114 115 hIoni 16 116 eIoni 17 117 118 G4MicroElecPhysics parameters: 119 e-_G4LOPhononScattering 19 120 e-_G4MicroElecSurface 20 121 alpha_G4Dielectrics 21 122 ion_G4Dielectrics 22 123 124 125 --------------------------------------------------------------------------- 126 127 Should you have any enquiry, please do not hesitate to contact one the corresponding authors.