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1 -------------------------------------------------------------------
2 -------------------------------------------------------------------
3
4 =========================================================
5 Geant4 - Microelectronics example
6 =========================================================
7
8 README file
9 ----------------------
10
11 CORRESPONDING AUTHORS
12
13 M. Raine*, D. Lambert*, C. Inguimbert', Q. Gibaru'
14 * CEA, DAM, DIF, F-91297 Arpajon, France
15 ' ONERA, 2 avenue Edouard Belin - BP 74025 - 31055 TOULOUSE, France
16 email: melanie.raine@cea.fr damien.lambert@cea.fr
17 christophe.Inguimbert@onera.fr Quentin.Gibaru@onera.fr
18
19 ---->0. INTRODUCTION.
20
21 The microelectronics example simulates the track of a 5 MeV proton in silicon.
22 Geant4 standard EM models are used in the World volume while Geant4-MicroElec models
23 are used in a Target volume, declared as a Region.
24
25 ---->1. GEOMETRY SET-UP.
26
27 By default, the geometry is a 2 um side cube (World) made of silicon containing
28 a smaller cubic Target volume of silicon (1 um3).
29 The target material can be modified and simulated with G4MicroElecPhysics processes.
30
31 ---->2. SET-UP
32
33 Make sure that the G4EMLOW database version is correct (> or = 7.16)
34
35 The variable G4ANALYSIS_USE must be set to 1.
36
37 The code should be compiled with cmake:
38 $ mkdir microelectronics-build
39 $ cd microelectronics-build
40 $ cmake -DGeant4_DIR=/your_path/geant4-install/ $PATHTOMICROELECEXAMPLE/microelectronics
41 $ make
42
43 It works in MT mode (but in this example today MT=1 due to memory consumption of new Microelec models).
44
45 ---->3. HOW TO RUN THE EXAMPLE
46
47 In interactive mode, run:
48
49 ./microelectronics
50
51 The macro microelectronics.mac is executed by default.
52
53 To get visualization, make sure to uncomment the #/control/execute vis.mac
54 line in the macro.
55
56 By default, the new MicroElec models are used.
57 You can used the Silicon MicroElec models, with the "-onlySi" option:
58 ./microelectronics -onlySi
59 or
60 ./microelectronics microelectronics.mac -onlySi
61
62 You can change the type of the target material
63 (G4_Ag G4_Al G4_C G4_Cu G4_Ge G4_KAPTON G4_Ni G4_Si G4_SILICON_DIOXIDE G4_Ti G4_W),
64 if you uncomment one line (/microelectronics/det/setMat) into the .mac file.
65
66
67
68 ---->4. PHYSICS
69
70 This example shows:
71 - how to use the G4MicroElecPhysics and G4MicroElecSiPhysics processes,
72 - how to affect them a name
73 - how to combine them with Standard EM Physics.
74
75 A simple electron capture process is also provided in order to kill electrons
76 below a chosen energy threshold, set in the Physics list.
77
78 Look at the G4MicroElecSiPhysics.cc (previous silicon MicroElec models)
79 and G4MicroElecPhysics.cc (new MicroElec models) files.
80
81 ---->5. SIMULATION OUTPUT AND RESULT ANALYZIS
82
83 The output results consists in a microelectronics.root file, containing for each simulation step:
84 - the type of particle for the current step
85 - the type of process for the current step
86 - the track position of the current step (in nanometers)
87 - the energy deposit along the current step (in eV)
88 - the step length (in nm)
89 - the total enery loss along the current step (in eV)
90
91 This file can be easily analyzed using for example the provided ROOT macro
92 file plot.C; to do so :
93 * be sure to have ROOT installed on your machine
94 * be sure to be in the microelectronics directory
95 * launch ROOT by typing root
96 * under your ROOT session, type in : .X plot.C to execute the macro file
97 * alternatively you can type directly under your session : root plot.C
98
99 The naming scheme on the displayed ROOT plots is as follows (see SteppingAction.cc):
100
101 -particles:
102 e- : 1
103 proton : 2
104 ion : 3
105
106 -processes:
107 e-_G4MicroElecElastic 11
108 e-_G4MicroElecInelastic 12
109 eCapture 13
110
111 p_G4MicroElecInelastic 14
112
113 ion_G4MicroElecInelastic 15
114
115 hIoni 16
116 eIoni 17
117
118 G4MicroElecPhysics parameters:
119 e-_G4LOPhononScattering 19
120 e-_G4MicroElecSurface 20
121 alpha_G4Dielectrics 21
122 ion_G4Dielectrics 22
123
124
125 ---------------------------------------------------------------------------
126
127 Should you have any enquiry, please do not hesitate to contact one the corresponding authors.
