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26 // 26 //
27 // G4MicroElecLOPhononModel.cc, 27 // G4MicroElecLOPhononModel.cc,
28 // 2020/05/20 P. Caron, C. Ingui << 28 // 2020/05/20 P. Caron, C. Inguimbert are with ONERA [b]
29 // Q. Gibaru is with << 29 // Q. Gibaru is with CEA [a], ONERA [b] and CNES [c]
30 // M. Raine and D. La << 30 // M. Raine and D. Lambert are with CEA [a]
31 // 31 //
32 // A part of this work has been funded by the 32 // A part of this work has been funded by the French space agency(CNES[c])
33 // [a] CEA, DAM, DIF - 91297 ARPAJON, France 33 // [a] CEA, DAM, DIF - 91297 ARPAJON, France
34 // [b] ONERA - DPHY, 2 avenue E.Belin, 31055 T 34 // [b] ONERA - DPHY, 2 avenue E.Belin, 31055 Toulouse, France
35 // [c] CNES, 18 av.E.Belin, 31401 Toulouse CED 35 // [c] CNES, 18 av.E.Belin, 31401 Toulouse CEDEX, France
36 // 36 //
37 // Based on the following publications 37 // Based on the following publications
38 // 38 //
39 // - J. Pierron, C. Inguimbert, M. Belhaj, T. << 39 // - J. Pierron, C. Inguimbert, M. Belhaj, T. Gineste, J. Puech, M. Raine
40 // Electron emission yield for low energy el << 40 // Electron emission yield for low energy electrons:
41 // Monte Carlo simulation and experimental c << 41 // Monte Carlo simulation and experimental comparison for Al, Ag, and Si
42 // Journal of Applied Physics 121 (2017) 215 << 42 // Journal of Applied Physics 121 (2017) 215107.
43 // https://doi.org/10.1063/1.4984761 << 43 // https://doi.org/10.1063/1.4984761
44 // << 44 //
45 // - P. Caron, << 45 // - P. Caron,
46 // Study of Electron-Induced Single-Event Up << 46 // Study of Electron-Induced Single-Event Upset in Integrated Memory Devices
47 // PHD, 16th October 2019 << 47 // PHD, 16th October 2019
48 // << 48 //
49 // - Q.Gibaru, C.Inguimbert, P.Caron, M.Raine, << 49 // - Q.Gibaru, C.Inguimbert, P.Caron, M.Raine, D.Lambert, J.Puech,
50 // Geant4 physics processes for microdosimet << 50 // Geant4 physics processes for microdosimetry and secondary electron emission simulation :
51 // Extension of MicroElec to very low energi << 51 // Extension of MicroElec to very low energies and new materials
52 // NIM B, 2020, in review. << 52 // NIM B, 2020, in review.
53 // 53 //
54 ////////////////////////////////////////////// << 54 //
>> 55 //....oooOO0OOooo........oooOO0OOooo........oooOO0OOooo........oooOO0OOooo......
55 56
56 #include "G4MicroElecLOPhononModel.hh" 57 #include "G4MicroElecLOPhononModel.hh"
57 #include "G4SystemOfUnits.hh" 58 #include "G4SystemOfUnits.hh"
58 #include "G4PhysicalConstants.hh" 59 #include "G4PhysicalConstants.hh"
59 60
60 G4MicroElecLOPhononModel::G4MicroElecLOPhononM 61 G4MicroElecLOPhononModel::G4MicroElecLOPhononModel(const G4ParticleDefinition*,
61 << 62 const G4String& nam)
62 : G4VEmModel(nam),isInitialised(false) << 63 : G4VEmModel(nam)
63 { 64 {
64 G4cout << "Phonon model is constructed " << << 65 fParticleChangeForGamma = GetParticleChangeForGamma();
65 << "Phonon Energy = " << phononEnergy << 66 //G4cout << "SiO2 Phonon model is constructed " << G4endl;
66 } 67 }
67 68
68 //....oooOO0OOooo........oooOO0OOooo........oo 69 //....oooOO0OOooo........oooOO0OOooo........oooOO0OOooo........oooOO0OOooo......
69 70
>> 71 G4MicroElecLOPhononModel::~G4MicroElecLOPhononModel()
>> 72 {}
>> 73
>> 74 //....oooOO0OOooo........oooOO0OOooo........oooOO0OOooo........oooOO0OOooo......
>> 75
70 void G4MicroElecLOPhononModel::Initialise(cons 76 void G4MicroElecLOPhononModel::Initialise(const G4ParticleDefinition*,
71 const G4DataVector& /*cuts*/ 77 const G4DataVector& /*cuts*/)
72 { << 78 {
73 if (isInitialised) { return; } 79 if (isInitialised) { return; }
>> 80 //G4cout << "Calling G4MicroElecLOPhononModel::Initialise()" << G4endl;
74 fParticleChangeForGamma = GetParticleChangeF 81 fParticleChangeForGamma = GetParticleChangeForGamma();
75 isInitialised = true; 82 isInitialised = true;
76 } 83 }
77 84
78 //....oooOO0OOooo........oooOO0OOooo........oo 85 //....oooOO0OOooo........oooOO0OOooo........oooOO0OOooo........oooOO0OOooo......
79 86
80 G4double G4MicroElecLOPhononModel:: << 87 G4double G4MicroElecLOPhononModel::CrossSectionPerVolume(const G4Material* material,
81 CrossSectionPerVolume(const G4Material* materi << 88 const G4ParticleDefinition*,
82 const G4ParticleDefiniti << 89 G4double ekin,
83 G4double ekin, << 90 G4double, G4double)
84 G4double, G4double <<
85 { 91 {
>> 92 if (material->GetName()!="G4_SILICON_DIOXIDE") return 0.0;
>> 93
86 const G4double e = CLHEP::eplus / CLHEP::cou 94 const G4double e = CLHEP::eplus / CLHEP::coulomb;
87 const G4double m0 = CLHEP::electron_mass_c2 95 const G4double m0 = CLHEP::electron_mass_c2 / (CLHEP::c_squared*CLHEP::kg);
88 const G4double h = CLHEP::hbar_Planck * CLHE 96 const G4double h = CLHEP::hbar_Planck * CLHEP::s/ (CLHEP::m2*CLHEP::kg);
89 const G4double eps0 = CLHEP::epsilon0 * CLHE 97 const G4double eps0 = CLHEP::epsilon0 * CLHEP::m/ (CLHEP::farad);
90 const G4double kb = CLHEP::k_Boltzmann * CLH 98 const G4double kb = CLHEP::k_Boltzmann * CLHEP::kelvin/ CLHEP::joule;
91 const G4double T = 300; <<
92 G4double eps = 9; <<
93 G4double einf = 3; <<
94 <<
95 const G4DataVector cuts; <<
96 Initialise(p, cuts); <<
97 <<
98 if (material->GetName() != "G4_SILICON_DIOXI <<
99 && material->GetName() != "G4_ALUMINUM_OXID <<
100 && material->GetName() != "G4_BORON_NITRIDE <<
101 { <<
102 return 1 / DBL_MAX; <<
103 } <<
104 <<
105 G4double E =(ekin/eV)*e; <<
106 <<
107 if (material->GetName() == "G4_ALUMINUM_OXID <<
108 { <<
109 eps = 9; <<
110 einf = 3; <<
111 phononEnergy = 0.1*eV; <<
112 } <<
113 if (material->GetName() == "G4_SILICON_DIOXI <<
114 { <<
115 eps = 3.84; <<
116 einf = 2.25; <<
117 phononEnergy = (0.75*0.153+0.25*0.063 )* e <<
118 } <<
119 <<
120 // Nuclear Instruments and Methods in Physic <<
121 // Beam Interactions with Materials and Atom <<
122 // Volume 454, 1 September 2019, Pages 14 - <<
123 // Nuclear Instruments and Methods in Physic <<
124 // Beam Interactions with Materials and Atom <<
125 // Monte Carlo modeling of low - energy elec <<
126 // electron emission yields in micro - archi <<
127 <<
128 if (material->GetName() == "G4_BORON_NITRIDE <<
129 { <<
130 eps = 7.1; <<
131 einf = 4.5; <<
132 phononEnergy = 0.17 * eV; <<
133 } <<
134 99
135 G4double hw = (phononEnergy / eV) * e; << 100 // Parameters SiO2
>> 101 phononEnergy = (0.75*0.153+0.25*0.063 )* CLHEP::eV;
>> 102 const G4double eps = 3.84;
>> 103 const G4double einf = 2.25;
>> 104 const G4double T = 300; // should be taken from material property
>> 105
>> 106 G4double E =(ekin/CLHEP::eV)*e;
>> 107
>> 108 G4double hw = (phononEnergy / CLHEP::eV) * e;
136 G4double n = 1.0 / (std::exp(hw / (kb*T)) - 109 G4double n = 1.0 / (std::exp(hw / (kb*T)) - 1); //Phonon distribution
137 << 110
138 if (absor) // Absorption << 111 G4double signe = (absor) ? -1. : 1.;
139 { << 112
140 Eprim = E + hw; << 113 G4double racine = std::sqrt(1. + ((-signe*hw) / E));
141 signe = -1; << 114
142 } <<
143 else // Emission <<
144 { <<
145 Eprim = E - hw; <<
146 signe = +1; <<
147 } <<
148 <<
149 G4double racine = std::sqrt(1 + ((-signe*hw) <<
150 G4double P = (std::pow(e, 2) / (4 * pi*eps0* 115 G4double P = (std::pow(e, 2) / (4 * pi*eps0*h*h)) * (n + 0.5 + signe*0.5) * ((1 / einf) - (1 / eps)) * std::sqrt(m0 / (2 * E)) *hw* std::log((1 + racine) / (signe * 1 + ((-signe)*racine)));
151 G4double MFP = (std::sqrt(2 * E / m0) / P)*m << 116
>> 117 G4double MFP = (std::sqrt(2. * E / m0) / P)*m;
152 118
153 if (material->GetName() == "G4_SILICON_DIOXI << 119 return 2. / MFP;
154 return 1/(MFP); <<
155 // correction CI 12/1/2023 add <<
156 } 120 }
157 121
158 //....oooOO0OOooo........oooOO0OOooo........oo 122 //....oooOO0OOooo........oooOO0OOooo........oooOO0OOooo........oooOO0OOooo......
159 123
160 void G4MicroElecLOPhononModel:: << 124 void G4MicroElecLOPhononModel::SampleSecondaries(
161 SampleSecondaries(std::vector<G4DynamicParticl << 125 std::vector<G4DynamicParticle*>*,
162 const G4MaterialCutsCouple*, << 126 const G4MaterialCutsCouple*,
163 const G4DynamicParticle* aDy << 127 const G4DynamicParticle* aDynamicElectron,
164 G4double, G4double) << 128 G4double, G4double)
165 { 129 {
>> 130
166 G4double E = aDynamicElectron->GetKineticEne 131 G4double E = aDynamicElectron->GetKineticEnergy();
167 Eprim = (absor) ? E + phononEnergy : E - pho << 132 G4double Eprim = (absor) ? E + phononEnergy : E - phononEnergy;
168 133
169 G4double rand = G4UniformRand(); 134 G4double rand = G4UniformRand();
170 G4double B = (E + Eprim + 2 * std::sqrt(E*Ep << 135 G4double B = (E + Eprim + 2 * std::sqrt(E*Eprim)) / (E + Eprim - 2 * std::sqrt(E*Eprim));
171 / (E + Eprim - 2 * std::sqrt(E*Ep << 136 G4double cosTheta = ((E + Eprim) / (2 * std::sqrt(E*Eprim)))*(1 - std::pow(B, rand)) + std::pow(B, rand);
172 G4double cosTheta = ((E + Eprim) / (2 * std: << 137
173 * (1 - std::pow(B, rand)) << 138 if(Interband){
174 if(Interband) <<
175 { <<
176 cosTheta = 1 - 2 * G4UniformRand(); //Isot 139 cosTheta = 1 - 2 * G4UniformRand(); //Isotrope
177 } 140 }
178 G4double phi = twopi * G4UniformRand(); 141 G4double phi = twopi * G4UniformRand();
179 G4ThreeVector zVers = aDynamicElectron->GetM 142 G4ThreeVector zVers = aDynamicElectron->GetMomentumDirection();
180 G4ThreeVector xVers = zVers.orthogonal(); 143 G4ThreeVector xVers = zVers.orthogonal();
181 G4ThreeVector yVers = zVers.cross(xVers); 144 G4ThreeVector yVers = zVers.cross(xVers);
182 145
183 G4double xDir = std::sqrt(1. - cosTheta*cosT 146 G4double xDir = std::sqrt(1. - cosTheta*cosTheta);
184 G4double yDir = xDir; 147 G4double yDir = xDir;
185 xDir *= std::cos(phi); 148 xDir *= std::cos(phi);
186 yDir *= std::sin(phi); 149 yDir *= std::sin(phi);
187 150
188 G4ThreeVector zPrimeVers((xDir*xVers + yDir* 151 G4ThreeVector zPrimeVers((xDir*xVers + yDir*yVers + cosTheta*zVers));
189 152
190 fParticleChangeForGamma->ProposeMomentumDire 153 fParticleChangeForGamma->ProposeMomentumDirection(zPrimeVers.unit());
191 fParticleChangeForGamma->SetProposedKineticE 154 fParticleChangeForGamma->SetProposedKineticEnergy(Eprim);
192 } 155 }
193 156
194 //....oooOO0OOooo........oooOO0OOooo........oo 157 //....oooOO0OOooo........oooOO0OOooo........oooOO0OOooo........oooOO0OOooo......
195 158