| Geant4 Cross Reference |
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25
26 // G4MicroElecSiStructure.hh, 2011/08/29 A.Val
27 //
28 // Based on the following publications
29 //
30 // - Inelastic cross-sections of low
31 // for the simulation of heavy ion tracks
32 // NSS Conf. Record 2010, pp. 80-85
33 // - Geant4 physics processes for microdo
34 // very low energy electromagnetic models
35 // NIM B, vol. 288, pp. 66-73, 2012.
36 // - Geant4 physics processes for microdo
37 // very low energy electromagnetic models
38 // heavy ions in Si, NIM B, vol. 287, pp.
39
40 #ifndef G4MICROELECSISTRUCTURE_HH
41 #define G4MICROELECSISTRUCTURE_HH 1
42
43 #include "globals.hh"
44
45 #include <vector>
46
47 class G4MicroElecSiStructure
48 {
49 public:
50 G4MicroElecSiStructure();
51
52 virtual ~G4MicroElecSiStructure() = default;
53
54 G4double Energy(G4int level);
55
56 G4int NumberOfLevels() { return nLevels; }
57
58 private:
59 G4int nLevels{6}; // Number of levels of si
60
61 std::vector<G4double> energyConstant;
62 };
63
64 #endif
65