| Geant4 Cross Reference |
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5 Geant4 - Microelectronics example
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7
8 README file
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10
11 CORRESPONDING AUTHO
12
13 M. Raine*, D. Lambert*, C. Inguimbert', Q. Gib
14 * CEA, DAM, DIF, F-91297 Arpajon, France
15 ' ONERA, 2 avenue Edouard Belin - BP 74025 - 3
16 email: melanie.raine@cea.fr damien.lambert@ce
17 christophe.Inguimbert@onera.fr Quentin.
18
19 ---->0. INTRODUCTION.
20
21 The microelectronics example simulates the tra
22 Geant4 standard EM models are used in the Worl
23 are used in a Target volume, declared as a Reg
24
25 ---->1. GEOMETRY SET-UP.
26
27 By default, the geometry is a 2 um side cube (
28 a smaller cubic Target volume of silicon (1 um
29 The target material can be modified and simula
30
31 ---->2. SET-UP
32
33 Make sure that the G4EMLOW database version is
34
35 The variable G4ANALYSIS_USE must be set to 1.
36
37 The code should be compiled with cmake:
38 $ mkdir microelectronics-build
39 $ cd microelectronics-build
40 $ cmake -DGeant4_DIR=/your_path/geant4-ins
41 $ make
42
43 It works in MT mode (but in this example today
44
45 ---->3. HOW TO RUN THE EXAMPLE
46
47 In interactive mode, run:
48
49 ./microelectronics
50
51 The macro microelectronics.mac is executed by
52
53 To get visualization, make sure to uncomment t
54 line in the macro.
55
56 By default, the new MicroElec models are used
57 You can used the Silicon MicroElec models, wi
58 ./microelectronics -onlySi
59 or
60 ./microelectronics microelectronics.mac -onlyS
61
62 You can change the type of the target material
63 (G4_Ag G4_Al G4_C G4_Cu G4_Ge G4_KAPTON G4_Ni
64 if you uncomment one line (/microelectronics/d
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66
67
68 ---->4. PHYSICS
69
70 This example shows:
71 - how to use the G4MicroElecPhysics and G4Micr
72 - how to affect them a name
73 - how to combine them with Standard EM Physics
74
75 A simple electron capture process is also prov
76 below a chosen energy threshold, set in the Ph
77
78 Look at the G4MicroElecSiPhysics.cc (previous
79 and G4MicroElecPhysics.cc (new MicroElec model
80
81 ---->5. SIMULATION OUTPUT AND RESULT ANALYZIS
82
83 The output results consists in a microelectron
84 - the type of particle for the current step
85 - the type of process for the current step
86 - the track position of the current step (in n
87 - the energy deposit along the current step (i
88 - the step length (in nm)
89 - the total enery loss along the current step
90
91 This file can be easily analyzed using for exa
92 file plot.C; to do so :
93 * be sure to have ROOT installed on your machi
94 * be sure to be in the microelectronics direct
95 * launch ROOT by typing root
96 * under your ROOT session, type in : .X plot.C
97 * alternatively you can type directly under yo
98
99 The naming scheme on the displayed ROOT plots
100
101 -particles:
102 e- : 1
103 proton : 2
104 ion : 3
105
106 -processes:
107 e-_G4MicroElecElastic 11
108 e-_G4MicroElecInelastic 12
109 eCapture 13
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111 p_G4MicroElecInelastic 14
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113 ion_G4MicroElecInelastic 15
114
115 hIoni 16
116 eIoni 17
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118 G4MicroElecPhysics parameters:
119 e-_G4LOPhononScattering 19
120 e-_G4MicroElecSurface 20
121 alpha_G4Dielectrics 21
122 ion_G4Dielectrics 22
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127 Should you have any enquiry, please do not hes