| Geant4 Cross Reference |
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3 3
4 ========================================= 4 =========================================================
5 Geant4 - Microelectronics example 5 Geant4 - Microelectronics example
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7 7
8 README file 8 README file
9 -------------------- 9 ----------------------
10 10
11 CORRESPONDING AUTHO 11 CORRESPONDING AUTHORS
12 12
13 M. Raine*, D. Lambert*, C. Inguimbert', Q. Gib 13 M. Raine*, D. Lambert*, C. Inguimbert', Q. Gibaru'
14 * CEA, DAM, DIF, F-91297 Arpajon, France 14 * CEA, DAM, DIF, F-91297 Arpajon, France
15 ' ONERA, 2 avenue Edouard Belin - BP 74025 - 3 15 ' ONERA, 2 avenue Edouard Belin - BP 74025 - 31055 TOULOUSE, France
16 email: melanie.raine@cea.fr damien.lambert@ce 16 email: melanie.raine@cea.fr damien.lambert@cea.fr
17 christophe.Inguimbert@onera.fr Quentin. 17 christophe.Inguimbert@onera.fr Quentin.Gibaru@onera.fr
18 18
19 ---->0. INTRODUCTION. 19 ---->0. INTRODUCTION.
20 20
21 The microelectronics example simulates the tra 21 The microelectronics example simulates the track of a 5 MeV proton in silicon.
22 Geant4 standard EM models are used in the Worl 22 Geant4 standard EM models are used in the World volume while Geant4-MicroElec models
23 are used in a Target volume, declared as a Reg 23 are used in a Target volume, declared as a Region.
24 24
25 ---->1. GEOMETRY SET-UP. 25 ---->1. GEOMETRY SET-UP.
26 26
27 By default, the geometry is a 2 um side cube ( 27 By default, the geometry is a 2 um side cube (World) made of silicon containing
28 a smaller cubic Target volume of silicon (1 um 28 a smaller cubic Target volume of silicon (1 um3).
29 The target material can be modified and simula 29 The target material can be modified and simulated with G4MicroElecPhysics processes.
30 30
31 ---->2. SET-UP 31 ---->2. SET-UP
32 32
33 Make sure that the G4EMLOW database version is 33 Make sure that the G4EMLOW database version is correct (> or = 7.16)
34 34
35 The variable G4ANALYSIS_USE must be set to 1. 35 The variable G4ANALYSIS_USE must be set to 1.
36 36
37 The code should be compiled with cmake: 37 The code should be compiled with cmake:
38 $ mkdir microelectronics-build 38 $ mkdir microelectronics-build
39 $ cd microelectronics-build 39 $ cd microelectronics-build
40 $ cmake -DGeant4_DIR=/your_path/geant4-ins 40 $ cmake -DGeant4_DIR=/your_path/geant4-install/ $PATHTOMICROELECEXAMPLE/microelectronics
41 $ make 41 $ make
42 42
43 It works in MT mode (but in this example today 43 It works in MT mode (but in this example today MT=1 due to memory consumption of new Microelec models).
44 44
45 ---->3. HOW TO RUN THE EXAMPLE 45 ---->3. HOW TO RUN THE EXAMPLE
46 46
47 In interactive mode, run: 47 In interactive mode, run:
48 48
49 ./microelectronics 49 ./microelectronics
50 50
51 The macro microelectronics.mac is executed by 51 The macro microelectronics.mac is executed by default.
52 52
53 To get visualization, make sure to uncomment t 53 To get visualization, make sure to uncomment the #/control/execute vis.mac
54 line in the macro. 54 line in the macro.
55 55
56 By default, the new MicroElec models are used 56 By default, the new MicroElec models are used.
57 You can used the Silicon MicroElec models, wi 57 You can used the Silicon MicroElec models, with the "-onlySi" option:
58 ./microelectronics -onlySi 58 ./microelectronics -onlySi
59 or 59 or
60 ./microelectronics microelectronics.mac -onlyS 60 ./microelectronics microelectronics.mac -onlySi
61 61
62 You can change the type of the target material 62 You can change the type of the target material
63 (G4_Ag G4_Al G4_C G4_Cu G4_Ge G4_KAPTON G4_Ni 63 (G4_Ag G4_Al G4_C G4_Cu G4_Ge G4_KAPTON G4_Ni G4_Si G4_SILICON_DIOXIDE G4_Ti G4_W),
64 if you uncomment one line (/microelectronics/d 64 if you uncomment one line (/microelectronics/det/setMat) into the .mac file.
65 65
66 66
67 67
68 ---->4. PHYSICS 68 ---->4. PHYSICS
69 69
70 This example shows: 70 This example shows:
71 - how to use the G4MicroElecPhysics and G4Micr 71 - how to use the G4MicroElecPhysics and G4MicroElecSiPhysics processes,
72 - how to affect them a name 72 - how to affect them a name
73 - how to combine them with Standard EM Physics 73 - how to combine them with Standard EM Physics.
74 74
75 A simple electron capture process is also prov 75 A simple electron capture process is also provided in order to kill electrons
76 below a chosen energy threshold, set in the Ph 76 below a chosen energy threshold, set in the Physics list.
77 77
78 Look at the G4MicroElecSiPhysics.cc (previous 78 Look at the G4MicroElecSiPhysics.cc (previous silicon MicroElec models)
79 and G4MicroElecPhysics.cc (new MicroElec model 79 and G4MicroElecPhysics.cc (new MicroElec models) files.
80 80
81 ---->5. SIMULATION OUTPUT AND RESULT ANALYZIS 81 ---->5. SIMULATION OUTPUT AND RESULT ANALYZIS
82 82
83 The output results consists in a microelectron 83 The output results consists in a microelectronics.root file, containing for each simulation step:
84 - the type of particle for the current step 84 - the type of particle for the current step
85 - the type of process for the current step 85 - the type of process for the current step
86 - the track position of the current step (in n 86 - the track position of the current step (in nanometers)
87 - the energy deposit along the current step (i 87 - the energy deposit along the current step (in eV)
88 - the step length (in nm) 88 - the step length (in nm)
89 - the total enery loss along the current step 89 - the total enery loss along the current step (in eV)
90 90
91 This file can be easily analyzed using for exa 91 This file can be easily analyzed using for example the provided ROOT macro
92 file plot.C; to do so : 92 file plot.C; to do so :
93 * be sure to have ROOT installed on your machi 93 * be sure to have ROOT installed on your machine
94 * be sure to be in the microelectronics direct 94 * be sure to be in the microelectronics directory
95 * launch ROOT by typing root 95 * launch ROOT by typing root
96 * under your ROOT session, type in : .X plot.C 96 * under your ROOT session, type in : .X plot.C to execute the macro file
97 * alternatively you can type directly under yo 97 * alternatively you can type directly under your session : root plot.C
98 98
99 The naming scheme on the displayed ROOT plots 99 The naming scheme on the displayed ROOT plots is as follows (see SteppingAction.cc):
100 100
101 -particles: 101 -particles:
102 e- : 1 102 e- : 1
103 proton : 2 103 proton : 2
104 ion : 3 104 ion : 3
105 105
106 -processes: 106 -processes:
107 e-_G4MicroElecElastic 11 107 e-_G4MicroElecElastic 11
108 e-_G4MicroElecInelastic 12 108 e-_G4MicroElecInelastic 12
109 eCapture 13 109 eCapture 13
110 110
111 p_G4MicroElecInelastic 14 111 p_G4MicroElecInelastic 14
112 112
113 ion_G4MicroElecInelastic 15 113 ion_G4MicroElecInelastic 15
114 114
115 hIoni 16 115 hIoni 16
116 eIoni 17 116 eIoni 17
117 117
118 G4MicroElecPhysics parameters: 118 G4MicroElecPhysics parameters:
119 e-_G4LOPhononScattering 19 119 e-_G4LOPhononScattering 19
120 e-_G4MicroElecSurface 20 120 e-_G4MicroElecSurface 20
121 alpha_G4Dielectrics 21 121 alpha_G4Dielectrics 21
122 ion_G4Dielectrics 22 122 ion_G4Dielectrics 22
123 123
124 124
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126 126
127 Should you have any enquiry, please do not hes 127 Should you have any enquiry, please do not hesitate to contact one the corresponding authors.