| Geant4 Cross Reference |
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>> 2 $Id: README,v 1.1 2012-09-21 mraine Exp $
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3 4
4 ========================================= 5 =========================================================
5 Geant4 - Microelectronics example 6 Geant4 - Microelectronics example
6 ========================================= 7 =========================================================
7 8
8 README file 9 README file
9 -------------------- 10 ----------------------
10 11
11 CORRESPONDING AUTHO << 12 CORRESPONDING AUTHOR
12 13
13 M. Raine*, D. Lambert*, C. Inguimbert', Q. Gib << 14 M. Raine
14 * CEA, DAM, DIF, F-91297 Arpajon, France << 15 CEA, DAM, DIF, F-91297 Arpajon, France
15 ' ONERA, 2 avenue Edouard Belin - BP 74025 - 3 << 16 * e-mail:melanie.raine@cea.fr
16 email: melanie.raine@cea.fr damien.lambert@ce <<
17 christophe.Inguimbert@onera.fr Quentin. <<
18 17
19 ---->0. INTRODUCTION. 18 ---->0. INTRODUCTION.
20 19
21 The microelectronics example simulates the tra 20 The microelectronics example simulates the track of a 5 MeV proton in silicon.
22 Geant4 standard EM models are used in the Worl 21 Geant4 standard EM models are used in the World volume while Geant4-MicroElec models
23 are used in a Target volume, declared as a Reg 22 are used in a Target volume, declared as a Region.
24 23
25 ---->1. GEOMETRY SET-UP. 24 ---->1. GEOMETRY SET-UP.
26 25
27 By default, the geometry is a 2 um side cube ( << 26 The geometry is a 1 um side cube (World) made of silicon containing a smaller cubic Target volume of silicon.
28 a smaller cubic Target volume of silicon (1 um <<
29 The target material can be modified and simula <<
30 27
31 ---->2. SET-UP 28 ---->2. SET-UP
32 29
33 Make sure that the G4EMLOW database version is << 30 Make sure G4LEDATA points to the low energy electromagnetic libraries.
34 31
35 The variable G4ANALYSIS_USE must be set to 1. 32 The variable G4ANALYSIS_USE must be set to 1.
36 33
37 The code should be compiled with cmake: 34 The code should be compiled with cmake:
>> 35 $ cd $HOME
38 $ mkdir microelectronics-build 36 $ mkdir microelectronics-build
39 $ cd microelectronics-build << 37 $ cd $HOME/microelectronics-build
40 $ cmake -DGeant4_DIR=/your_path/geant4-ins << 38 $ cmake -DGeant4_DIR=/your_path/geant4-install/lib64/Geant4-9.5.0 $HOME/microelectronics
41 $ make 39 $ make
42 40
43 It works in MT mode (but in this example today << 41 It works in MT mode.
44 42
45 ---->3. HOW TO RUN THE EXAMPLE 43 ---->3. HOW TO RUN THE EXAMPLE
46 44
47 In interactive mode, run: 45 In interactive mode, run:
48 46
49 ./microelectronics << 47 ./Microelectronics
50 48
51 The macro microelectronics.mac is executed by 49 The macro microelectronics.mac is executed by default.
52 50
53 To get visualization, make sure to uncomment t 51 To get visualization, make sure to uncomment the #/control/execute vis.mac
54 line in the macro. 52 line in the macro.
55 53
56 By default, the new MicroElec models are used <<
57 You can used the Silicon MicroElec models, wi <<
58 ./microelectronics -onlySi <<
59 or <<
60 ./microelectronics microelectronics.mac -onlyS <<
61 <<
62 You can change the type of the target material <<
63 (G4_Ag G4_Al G4_C G4_Cu G4_Ge G4_KAPTON G4_Ni <<
64 if you uncomment one line (/microelectronics/d <<
65 <<
66 <<
67 <<
68 ---->4. PHYSICS 54 ---->4. PHYSICS
69 55
70 This example shows: 56 This example shows:
71 - how to use the G4MicroElecPhysics and G4Micr << 57 - how to use the Geant4-MicroElec processes,
72 - how to affect them a name 58 - how to affect them a name
73 - how to combine them with Standard EM Physics 59 - how to combine them with Standard EM Physics.
74 60
75 A simple electron capture process is also prov 61 A simple electron capture process is also provided in order to kill electrons
76 below a chosen energy threshold, set in the Ph 62 below a chosen energy threshold, set in the Physics list.
77 63
78 Look at the G4MicroElecSiPhysics.cc (previous << 64 Look at the PhyscisList.cc file.
79 and G4MicroElecPhysics.cc (new MicroElec model <<
80 65
81 ---->5. SIMULATION OUTPUT AND RESULT ANALYZIS 66 ---->5. SIMULATION OUTPUT AND RESULT ANALYZIS
82 67
83 The output results consists in a microelectron 68 The output results consists in a microelectronics.root file, containing for each simulation step:
84 - the type of particle for the current step 69 - the type of particle for the current step
85 - the type of process for the current step 70 - the type of process for the current step
86 - the track position of the current step (in n 71 - the track position of the current step (in nanometers)
87 - the energy deposit along the current step (i 72 - the energy deposit along the current step (in eV)
88 - the step length (in nm) 73 - the step length (in nm)
89 - the total enery loss along the current step 74 - the total enery loss along the current step (in eV)
90 75
91 This file can be easily analyzed using for exa 76 This file can be easily analyzed using for example the provided ROOT macro
92 file plot.C; to do so : 77 file plot.C; to do so :
93 * be sure to have ROOT installed on your machi 78 * be sure to have ROOT installed on your machine
94 * be sure to be in the microelectronics direct 79 * be sure to be in the microelectronics directory
95 * launch ROOT by typing root 80 * launch ROOT by typing root
96 * under your ROOT session, type in : .X plot.C 81 * under your ROOT session, type in : .X plot.C to execute the macro file
97 * alternatively you can type directly under yo 82 * alternatively you can type directly under your session : root plot.C
98 83
99 The naming scheme on the displayed ROOT plots 84 The naming scheme on the displayed ROOT plots is as follows (see SteppingAction.cc):
100 85
101 -particles: 86 -particles:
102 e- : 1 87 e- : 1
103 proton : 2 88 proton : 2
104 ion : 3 89 ion : 3
105 90
106 -processes: 91 -processes:
107 e-_G4MicroElecElastic 11 92 e-_G4MicroElecElastic 11
108 e-_G4MicroElecInelastic 12 93 e-_G4MicroElecInelastic 12
109 eCapture 13 94 eCapture 13
110 95
111 p_G4MicroElecInelastic 14 96 p_G4MicroElecInelastic 14
112 97
113 ion_G4MicroElecInelastic 15 98 ion_G4MicroElecInelastic 15
114 99
115 hIoni 16 100 hIoni 16
116 eIoni 17 101 eIoni 17
117 102
118 G4MicroElecPhysics parameters: <<
119 e-_G4LOPhononScattering 19 <<
120 e-_G4MicroElecSurface 20 <<
121 alpha_G4Dielectrics 21 <<
122 ion_G4Dielectrics 22 <<
123 <<
124 <<
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126 104
127 Should you have any enquiry, please do not hes << 105 Should you have any enquiry, please do not hesitate to contact:
>> 106 melanie.raine@cea.fr